Bruno Ghyselen

SOITEC

  • 17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates

    Bruno Ghyselen, SOITEC
    François-Xavier Darras, SOITEC
    Odile Mourey, SOITEC
    Christelle Navone, Univ. Grenoble Alpes
    Loic Sanchez, Univ. Grenoble Alpes
    Christine Di Nardo, Univ. Grenoble Alpes
    Carla Crobu, Univ. Grenoble Alpes
    Laura Toselli, Univ. Grenoble Alpes
    Baptiste Rousset, Univ. Grenoble Alpes
    Frédéric Milesi, Univ. Grenoble Alpes
    Laurence Gabette, Univ. Grenoble Alpes
    Frank Fournel, Univ. Grenoble Alpes
    Jean Decobert, III-V Lab
    Claire Besancon, III-V Lab
    Mickael Martin, Univ. Grenoble Alpes
    Jeremy Moeyaert, Univ. Grenoble Alpes
    Thierry Baron, Univ. Grenoble Alpes

    17.1.2023_Ghyselen_SOITEC_extended_abstract_final_v2

  • 7A.1 – First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications

    A. Vais, Imec
    A. Kumar, Imec
    S. Yadav, Imec
    G. Boccardi, Imec
    Y. Mols, Imec
    R. Alcotte, Imec
    B. Vermeersch, Imec
    U. Peralagu, Imec
    c. Roda Neve, SOITEC
    Bruno Ghyselen, SOITEC
    B. Parvais, imec vzw, Leuven, Belgium
    B. Kunert, Imec
    N. Collaert, Imec

    7A.1 Final.2025

    Abstract
    In this work, we present the first demonstration of InP HBTs grown and fabricated on an engineered InPOSi substrate. Physical and electrical characterizations were performed to measure its crystal quality and device performance. We show that the performance of devices fabricated on an InPOSi substrate is close to devices fabricated on a native InP substrates making such a technology suitable for advanced RF applications. Fabricated devices show ft/fmax of ~140 GHz/70GHz with BVceo/BVcbo of 3.5 V/5.5 V at an ON current density of 8mA/μm2.