Bruno Ghyselen
SOITEC
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17.1.2023 Large Diameter Epi-Ready InP on Si (InPOSi) Substrates
Bruno Ghyselen, SOITECFrançois-Xavier Darras, SOITECOdile Mourey, SOITECChristelle Navone, Univ. Grenoble AlpesLoic Sanchez, Univ. Grenoble AlpesChristine Di Nardo, Univ. Grenoble AlpesCarla Crobu, Univ. Grenoble AlpesLaura Toselli, Univ. Grenoble AlpesBaptiste Rousset, Univ. Grenoble AlpesFrédéric Milesi, Univ. Grenoble AlpesLaurence Gabette, Univ. Grenoble AlpesFrank Fournel, Univ. Grenoble AlpesJean Decobert, III-V LabClaire Besancon, III-V LabMickael Martin, Univ. Grenoble AlpesJeremy Moeyaert, Univ. Grenoble AlpesThierry Baron, Univ. Grenoble Alpes -
7A.1 – First Demonstration of InP HBTs on InP-on-Si (InPOSi) Substrate: A Cost-Effective and Sustainable III/V-on-Si Technology for Advanced RF Applications
A. Vais, ImecA. Kumar, ImecS. Yadav, ImecG. Boccardi, ImecY. Mols, ImecR. Alcotte, ImecB. Vermeersch, ImecU. Peralagu, Imecc. Roda Neve, SOITECBruno Ghyselen, SOITECB. Parvais, imec vzw, Leuven, BelgiumB. Kunert, ImecN. Collaert, ImecAbstract
In this work, we present the first demonstration of InP HBTs grown and fabricated on an engineered InPOSi substrate. Physical and electrical characterizations were performed to measure its crystal quality and device performance. We show that the performance of devices fabricated on an InPOSi substrate is close to devices fabricated on a native InP substrates making such a technology suitable for advanced RF applications. Fabricated devices show ft/fmax of ~140 GHz/70GHz with BVceo/BVcbo of 3.5 V/5.5 V at an ON current density of 8mA/μm2.