C. Bolton

KKLA Corporation SPTS, Newport, UK
  • May 12, 2022 // 3:20pm

    18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

    Kevin Riddell, SPTS, Newport, UK
    A. Croot, KLA Corporation (SPTS Division)
    C. Bolton, KKLA Corporation SPTS, Newport, UK
    B. Jones, Swansea University
    F. Monaghan, Swansea University, Swansea, UK
    J. Mitchell, KLA Corporation (SPTS Division)
    M. R. Jennings, Swansea University, Swansea, UK
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
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  • 12.9 – Low Damage Chlorine-Based Dry Etch for Fabrication of Ga2O3 FinFETs and Trench Diodes

    X. Zhai, University of Michigan
    Z. Wen, University of Michigan
    J. Burnett, KLA Corporation (SPTS Division)
    J. Mitchell, KLA Corporation (SPTS Division)
    C. Bolton, KKLA Corporation SPTS, Newport, UK
    K. Roberts, KLA Corporation (SPTS Division)
    E. Walsby, KLA Corporation (SPTS Division)
    Huma Ashraf, KLA Corporation (SPTS Division)
    R. L. Peterson, University of Michigan
    E. Ahmadi, University of California Los Angeles

    12.9 Final.2025

    Abstract
    The impact of chlorine-based etch conditions on etch profile and etched-surface quality was investigated. For this purpose, ALD HfSiOx/Ga2O3 trench-MOSCAPs were utilized as the test structure to understand the impact of etch conditions on sidewall quality (e.g. sidewall roughness and process-induced damage). UV-assisted capacitance-voltage measurements were employed to quantify the interface trap density.