Chaeyun Kim
Kumoh National Institute of Technology
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12.4.2023 Analysis of the effects of Gamma-ray irradiation on SiC MOSFETs
Chaeyun Kim, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyDong-Seok Kim, Korea Atomic Energy Research Institute, Republic of KoreaOgyun Seok, Kumoh National Institute of Technology -
18.13.2023 Design and Optimization of 1.2 kV SiC Trench MOSFETs Using a Tilted Ion Implantation Process for High Breakdown Voltage
Yeongeun Park, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of TechnologyGyuhyeok Kang, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology -
12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes
Sangyeob Kim, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyGyuhyeok Kang, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/12.0.5.2024-Junction-termination-extensions-using-P-type-epitaxial-growth-layers-for-3.3-kV-SiC-.pdf” download=”all”]
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12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs
Gyuhyeok Kang, Kumoh National Institute of TechnologyYeongeun Park, Kumoh National Institute of TechnologyHyowon Yoon, Kumoh National Institute of TechnologyChaeyun Kim, Kumoh National Institute of TechnologySangyeob Kim, Kumoh National Institute of TechnologyOgyun Seok, Kumoh National Institute of Technology[embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/12.0.6.2024-Improving-the-Surge-Characteristics-of-SiC-MOSFETs-by-Using-Poly-Si-SBDs.pdf” download=”all”]