D. Lindblad

Forge Nano

  • 12.0.2.2024 Enhanced Dielectric Performance of HfO2 Thin Films Via Novel Atomic Layer Deposition Conversion at Production Speed and Efficiency

    D. Lindblad, Forge Nano
    S. Harris, Forge Nano
    A. Wang, Forge Nano
    L. Mueller, Forge Nano
    A. Dameron, Forge Nano
    M. Weimer, Forge Nano
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  • 12.11 – Reconfiguration of CMP Tools for BEOL Processing of Compound Semiconductor (III-V Microsystems) Devices

    J. Zabasajja, HRL Laboratories
    G. Candia, HRL Laboratories
    E. Osuna, HRL Laboratories
    K. Miles, HRL Laboratories
    L. Borucki, Araca Incorporated
    Y. Sampurno, Araca Incorporated
    A. Philipossian, Araca Incorporated

    12.11 Final.2025

    Abstract
    In this paper, we focus on a simple hardware reconfiguration of CMP tools by deploying a slurry injection system (SIS) that modifies the slurry flow distribution, resulting in a more uniformly distributed thin layer of slurry on the polishing pad. The benefits of deploying the SIS on the CMP tools are clearly demonstrated: a 40-50% reduction in slurry flow rate — resulting in increasing throughput due to higher removal rate. A 2- 4% improvement in planarization was also obtained on patterned wafers polished with 5 kÅ of silicon dioxide (SiO2) deposited on top of a titanium/aluminum (Ti/Al) metal stack on a silicon substrate.