Transphorm is supplying N-polar GaN on SiC and sapphire epitaxial wafers for customers developing ultra-high performance RF and mm-wave electronics devices. The manufacturing process is SPC controlled and DOE optimized, and the wafers exhibit very high 2DEG electron mobility and excellent thickness and Rsh uniformities.
Manufacturing of N-polar GaN on Sapphire Epitaxial Wafers for Millimeter-wave Electronics ApplicationsUmesh Mishra, TransphormXiang Liu, Transphorm Inc.Ron Birkhahn, Transphorm Inc.Stacia Keller, Transphorm Inc.Brian Swenson, Transphorm Inc.Lee McCarthy, Transphorm Inc.Davide Bisi, Transphorm Inc.Download Paper
2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave ApplicationsXiang Liu, Transphorm Inc.,Brian Romanczyk, Transphorm Inc.Stacia Keller, Transphorm Inc.Brian Swenson, Transphorm Inc.Ron Birkhahn, Transphorm Inc.Geetak Gupta, Transphorm Inc.Davide Bisi, Transphorm Inc.Umesh Mishra, TransphormLee McCarthy, Transphorm Inc.Download Paper
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