In this paper, we report our work on epitaxial growth of InAlN HEMTs for RF device applications. InAlN HEMTs were grown on 8” high resistivity silicon substrates. Various characterization techniques were used to analyze the quality of the epi wafers. An average sheet resistance (Rsh) of 206Ω/□, with a uniformity of 1.5% (1s/average), indicated a high quality and uniform 2DEG. Hall measurement showed a high sheet charge density of 2.27×1013cm−2 and a mobility of 1430cm2/(Vs). A pit free epi surface was obtained with optimized growth process of the active layers. T-gate RF devices fabricated on the InAlN epi wafers demonstrated an fT of 250GHz and an fMAX of 204 GHz, which are the record high values for GaN-based HEMTs on silicon.
InAlN HEMT Epi and RF Devices on 8”-SiHuili Xing, Cornell UniversityMing Pan, Veeco InstrumentsSoo-Min Lee, Veeco InstrumentsEric Tucker, Veeco InstrumentsRandhir Bubber, Veeco InstrumentsAjit Paranjpe, Veeco InstrumentsDrew Hanser, Veeco Instruments, Inc.Kazuki Nomoto, Cornell UniversityLei Li, Cornell UniversityDebdeep Jena, Cornell UniversityDownload Paper
12.1 GaN Nanowire MISFETs for Low-Power ApplicationsWenjun Li, University of Notre DameKasra Pourang, University of Notre DameS M Moududul Islam, Cornell UniversityDebdeep Jena, Cornell UniversityPatrick Fay Fay, University of Notre Dame
May 11, 2022 // 11:10am
8.2 How to Unleash Power of Ga2O3?Xing Huili-(Grace), Cornell UniversityWenshen Li, Cornell UniversityZongyang Hu, Cornell UniversityKazuki Nomoto, Cornell UniversityDebdeep Jena, Cornell UniversityDownload Paper