Dmitriy Marinskiy

Semilab SDI, Tampa, FL,
  • Micro-scale Imaging of Electrical Activity of Yield Killer Defects in 4H-SiC with Charge Assisted KFM and UV-Photoluminescence

    Jacek Lagowski, Semilab SDI, Tampa, FL,
    Marshall Wilson, Semilab SDI, Tampa, FL,
    David Greenock, X-Fab
    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    Alexandre Savtchouk, Semilab SDI
    Anthony Ross III, Semilab SDI
    Carlos Almeida, Semilab SDI
    Bret Schrayer, Semilab SDI, Tampa, FL,
    John D’Amico, Semilab SDI

    In this work we compare non-contact charge-voltage imaging and UV-photoluminescence (UV-PL) imaging of yield killer defects in epitaxial 4H-SiC wafers.  Two significant findings are based on macro- and micro-scale imaging, respectively.  1- Whole wafer images demonstrate that only a fraction of the UV-PL defects in triangular, downfall and carrot categories are electrically active. 2- Micro-scale images reveal similarities and differences between PL and electrical defect images.  Presented for the first time, micrometer resolution leakage patterns within triangular defects are consistent with the microstructure modeling in reference 1. The results imply that the depletion layer leakage within killer defects corresponds to exposed 3C-SiC polytypes. This leakage may be a consequence of the lower 2.2eV energy gap of 3C-SiC compared to 3.3eV in 4H-SiC.

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  • 11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach

    Marshall Wilson, Semilab SDI, Tampa, FL,
    Alexandre Savtchouk, Semilab SDI
    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    Jacek Lagowski, Semilab SDI, Tampa, FL,
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  • May 19, 2022 // 1:50pm

    17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers

    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    Bret Schrayer, Semilab SDI, Tampa, FL,
    Mark Benjamin, Lehighton Electronics Inc,
    Jacek Lagowski, Semilab SDI, Tampa, FL,
    Marshall Wilson, Semilab SDI, Tampa, FL,
    D. Nguyen, Semilab LEI, Lehighton, PA

    Abstract

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  • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

    M. Wilson, Semilab SDI
    David Greenock, X-Fab
    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    Carlos Almeida, Semilab SDI
    John D’Amico, Semilab SDI
    Jacek Lagowski, Semilab SDI, Tampa, FL,
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  • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    M. Wilson, Semilab SDI
    Carlos Almeida, Semilab SDI
    S. Savtchouk, Semilab SDI,
    Jacek Lagowski, Semilab SDI, Tampa, FL,
    S. Toth, Semilab ZRT
    L. Badeeb, Semilab ZRT
    A. Faragó, Semilab ZRT
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