In this work we compare non-contact charge-voltage imaging and UV-photoluminescence (UV-PL) imaging of yield killer defects in epitaxial 4H-SiC wafers. Two significant findings are based on macro- and micro-scale imaging, respectively. 1- Whole wafer images demonstrate that only a fraction of the UV-PL defects in triangular, downfall and carrot categories are electrically active. 2- Micro-scale images reveal similarities and differences between PL and electrical defect images. Presented for the first time, micrometer resolution leakage patterns within triangular defects are consistent with the microstructure modeling in reference 1. The results imply that the depletion layer leakage within killer defects corresponds to exposed 3C-SiC polytypes. This leakage may be a consequence of the lower 2.2eV energy gap of 3C-SiC compared to 3.3eV in 4H-SiC.
Dmitriy Marinskiy
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Micro-scale Imaging of Electrical Activity of Yield Killer Defects in 4H-SiC with Charge Assisted KFM and UV-Photoluminescence
J. Lagowski, Semilab SDIMarshall Wilson, Semilab SDI, Tampa, FL,David Greenock, X-FabDmitriy Marinskiy, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDIAnthony Ross III, Semilab SDICarlos Almeida, Semilab SDIB. Schrayer, Semilab SDIJohn D’Amico, Semilab SDIDownload Paper -
11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDIDmitriy Marinskiy, Semilab SDI, Tampa, FL,J. Lagowski, Semilab SDI -
May 19, 2022 // 1:50pm
17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
Dmitriy Marinskiy, Semilab SDI, Tampa, FL,B. Schrayer, Semilab SDIMark Benjamin, Lehighton Electronics Inc,J. Lagowski, Semilab SDIMarshall Wilson, Semilab SDI, Tampa, FL,D. Nguyen, Semilab LEI, Lehighton, PADownload PaperLoading...
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2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
M. Wilson, Semilab SDIDavid Greenock, X-FabDmitriy Marinskiy, Semilab SDI, Tampa, FL,Carlos Almeida, Semilab SDIJohn D’Amico, Semilab SDIJ. Lagowski, Semilab SDIDownload PaperLoading...
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2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
Dmitriy Marinskiy, Semilab SDI, Tampa, FL,M. Wilson, Semilab SDICarlos Almeida, Semilab SDIS. Savtchouk, Semilab SDI,J. Lagowski, Semilab SDIS. Toth, Semilab ZRTL. Badeeb, Semilab ZRTA. Faragó, Semilab ZRTDownload PaperLoading...
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10B.2 – Macro and Micro-Scale Non-Contact Imaging of Electrically Active Extended Defects in Merged PiN Schottky Diode Devices
F. Faisal, NexperiaN. Steller, NexperiaR. Karhu, Fraunhofer IISBB. Kallinger, Fraunhofer IISBG. Polisski, Semilab Germany GmbHM. Wilson, Semilab SDIA. Savtchouk, Semilab SDIL. Guitierrez, Semilab SDICarlos Almeida, Semilab SDIC. Soto, Semilab SDIB. Wilson, Semilab SDIDmitriy Marinskiy, Semilab SDI, Tampa, FL,A. Wincukiewicz, Semilab SDIJ. Lagowski, Semilab SDIAbstract
This study presents a novel approach to device yield estimation based on the non-contact, corona-based QUAD(Quality, Uniformity, and Defects) technique for inline defect mapping in SiC epitaxial layers. The approach is applied to a merged PiN Schottky diode manufacturing process and is compared to final wafer level electrical data. A new analysis method for QUAD defect mapping is introduced, incorporating die yield bin maps based on indie depletion voltage values, allowing for a direct comparison with final electrical device performance. Micro-scale, QUAD and voltage data within each individual diode can gain further insight into the electrical nature of the defects causing the device failure. The results demonstrate a strong correlation between the inline QUAD bin map results and final device electrical properties, highlighting the potential of QUAD as a practical and powerful inline tool. This technique offers a complementary approach to UVPL defect imaging, identifying electrically active defects and enhancing estimations of the final production yield.