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Geetak Gupta
Transphorm Inc.
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2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications
Xiang Liu, Transphorm Inc.,Brian Romanczyk, Transphorm Inc.Stacia Keller, Transphorm Inc.Brian Swenson, Transphorm Inc.Ron Birkhahn, Transphorm Inc.Geetak Gupta, Transphorm Inc.Davide Bisi, Transphorm Inc.Umesh Mishra, Transphorm also Dean of Engineering UCSBLee McCarthy, Transphorm Inc.Download Paper -
5.0.1.2024 GaN Power: the solution that is not SiC
U. K. Mishra, Transphorm Inc. & University of Santa Barbara CaliforniaDavide Bisi, Transphorm Inc.Geetak Gupta, Transphorm Inc.C. J. Neufeld, Transphorm IncR. Lal, Transphorm IncP. Zuk, Transphorm IncL. Shen, Transphorm IncP. Parikh, Transphorm IncLoading...