Geoffrey M. Foster

U.S. Naval Research Laboratory

  • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
    Joseph Spencer, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Vladimir Odnoblyudov, Qromis, Inc.
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors

  • 3B.5 – Stability of 3.3 kV Planar GaN Diodes with Nitrogen Implanted Termination under High Temperature Reverse Bias Stressing

    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Travis J. Anderson, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    J. C. Gallagher, U.S. Naval Research Laboratory
    Brendan. P. Gunning, Sandia National Labs, Albuquerque, NM
    Robert Kaplar, Sandia National Labs, Albuquerque, NM
    Karl D. Hobart, U.S. Naval Research Laboratory
    M.A. Mastro, U.S. Naval Research Laboratory

    3B.5 Final.2025

    ABSTRACT
    Planar vertical gallium nitride devices are capable of utilizing the beneficial material properties inherent to bulk GaN without the interference of surface leakage pathways or passivation failures inherent to lateral devices, however, the stability and long-term viability of implanted termination necessitates study. Here we show  stressing of 3.3kV vertical GaN diodes with nitrogen implanted termination at over 80% of the breakdown voltage and at up to 200°C for over 400 hours. Some diodes exhibit a burn-in effect with small changes to the breakdown voltage and leakage at breakdown while others exhibit robust and nearly invariant behavior to the limits of testing. Additionally, thermal stressing of a cohort of devices without bias shows an increased degradation of breakdown voltage above 300°C and differentiation of devices within the cohort beyond 350°C enabling further study of the degradation mechanisms.