Hermann Stieglauer

United Monolithic Semiconductors Germany
  • Impact of water content in NMP on ohmic contacts in GaN HEMT technologies

    Michael Hosch, United Monolithic Semiconductors
    Alexander Hugger, United Monolithic Semiconductors GmbH, Ulm
    Aleksandra Dlugolecka, United Monolithic Semiconductors GmbH, Ulm
    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Raphael Ehrbrecht, United Monolithic Semiconductors GmbH, Ulm

    Wet chemical lift off in N-Methyl-2-pyrrolidone (NMP) is widely used in GaN HEMT Front End manufacturing.  In case of a Ti-Al-Ni-Au based metal stack for ohmic contacts, the quality of the lift-off process is much depending on the water content in the solvent NMP. In this paper, it will be shown that the metal stack can be attacked during lift off in NMP with too high water content. Additionally, environmental impacts on the hygroscopy of NMP are investigated in order to keep moisture below a certain level and avoid optical defects on ohmic contacts after lift off.

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  • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Klaus Riepe, United Monolithic Semiconductorss GmBH
    Janina Moereke, United Monolithic Semiconductorss GmBH
    Jan Grünenpütt, United Monolithic Semiconductors France
    Hervé Blanck, United Monolithic Semiconductors
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Benoît Lambert, United Monolithic Semiconductors Germany
    Jerome Van de Casteele, United Monolithic Semiconductorss SAS
    Mehdy Neffati, United Monolithic Semiconductorss SAS
    Ulli Hansen, MSG Lithoglas GmbH
    Simon Maus, MSG Lithoglas GmbH
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  • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

    Jan Grünenpütt, United Monolithic Semiconductors France
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Jörg Splettstößer, United Monolithic Semiconductors – GmbH
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Hervé Blanck, United Monolithic Semiconductors
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