Hideaki Matsuzaki

NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan

  • 18.14.2023 A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

    Hyo-Jin Kim, Kyungpook National University, Daegu, South Korea
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, School of Electronic and Electrical Engineering, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    In-Geun Lee, School of Electronic and Electrical Engineering, Kyungpook National University
    Tae-Woo Kim, University of Ulsan, Ulsan, South Korea
    Sang-Kuk Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Yong-Hyun Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Jacob Yun, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Ted Kim, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Hideaki Matsuzaki, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, School of Electronic and Electrical Engineering, Kyungpook National University
    Dae-Hyun Kim, School of Electronic and Electrical Engineering, Kyungpook National University

    18.14.2023_CS_MANTECH-extended papar_v4