Hossein Yazdani

Ferdinand-Braun-Institut,

  • 5.3.2021 Analysis of GaN-HEMT DC-Characteristic Alterations by Gate Encapsulation Layer

    Hossein Yazdani, Ferdinand-Braun-Institut,
    Serguei Chevtchenko, Ferdinand-Braun-Institut,
    Joachim Würfl, Ferdinand-Braun-Institut
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  • 11.1.4.2024 Subtractive WSiN thin film resistors for RF GaN and InP MMICs

    Hossein Yazdani, Ferdinand-Braun-Institut (FBH)
    Hady Yacoub, Ferdinand-Braun-Institut (FBH)
    Amer Bassal, Ferdinand-Braun-Institut (FBH)
    Taylor Moule, Ferdinand-Braun-Institut (FBH)
    Joost Wartena, Ferdinand-Braun-Institut (FBH)
    Oliver Hilt, Ferdinand-Braun-Institut (FBH)
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