Huma Ashraf
KLA Corporation (SPTS Division)
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18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.
Tristan T. Burman, Cardiff UniversityJash Patel, KLA CorporationHuma Ashraf, KLA Corporation (SPTS Division)Tarran Grange, KLA CorporationSamuel Shutts, Cardiff UniversityPeter M. Smowton, Cardiff University -
May 12, 2022 // 3:20pm
18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs
Kevin Riddell, SPTS, Newport, UKA. Croot, KLA Corporation (SPTS Division)C. Bolton, KKLA Corporation SPTS, Newport, UKB. Jones, Swansea UniversityF. Monaghan, Swansea University, Swansea, UKJ. Mitchell, KLA Corporation (SPTS Division)M. R. Jennings, Swansea University, Swansea, UKO. J. Guy, Centre for Integrative Semiconductor Materials (CISM),Download PaperLoading...
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3.1.4.2024 Plasma Dicing for High Yield SiC Singulation
A. Croot, KLA Corporation (SPTS Division)B. Jones, Swansea UniversityJ. Mitchell, KLA Corporation (SPTS Division)Huma Ashraf, KLA Corporation (SPTS Division)M. Jennings, Swansea UniversityJanet Hopkins, KLA Corporation (SPTS Division)O. J. Guy, Centre for Integrative Semiconductor Materials (CISM), -
12.9 – Low Damage Chlorine-Based Dry Etch for Fabrication of Ga2O3 FinFETs and Trench Diodes
X. Zhai, University of MichiganZ. Wen, University of MichiganJ. Burnett, KLA Corporation (SPTS Division)J. Mitchell, KLA Corporation (SPTS Division)C. Bolton, KKLA Corporation SPTS, Newport, UKK. Roberts, KLA Corporation (SPTS Division)E. Walsby, KLA Corporation (SPTS Division)Huma Ashraf, KLA Corporation (SPTS Division)R. L. Peterson, University of MichiganE. Ahmadi, University of California Los AngelesAbstract
The impact of chlorine-based etch conditions on etch profile and etched-surface quality was investigated. For this purpose, ALD HfSiOx/Ga2O3 trench-MOSCAPs were utilized as the test structure to understand the impact of etch conditions on sidewall quality (e.g. sidewall roughness and process-induced damage). UV-assisted capacitance-voltage measurements were employed to quantify the interface trap density.