Huma Ashraf

KLA Corporation (SPTS Division)

  • 18.8.2023 Determining the impact of facet roughness on etched facet InP laser devices operating at telecom wavelengths, making comparisons to theoretical models.

    Tristan T. Burman, Cardiff University
    Jash Patel, KLA Corporation
    Huma Ashraf, KLA Corporation (SPTS Division)
    Tarran Grange, KLA Corporation
    Samuel Shutts, Cardiff University
    Peter M. Smowton, Cardiff University

    18.08.2023 CS_MANTECH-FinalDraft-18-10

  • May 12, 2022 // 3:20pm

    18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

    Kevin Riddell, SPTS, Newport, UK
    A. Croot, KLA Corporation (SPTS Division)
    C. Bolton, KKLA Corporation SPTS, Newport, UK
    B. Jones, Swansea University
    F. Monaghan, Swansea University, Swansea, UK
    J. Mitchell, KLA Corporation (SPTS Division)
    M. R. Jennings, Swansea University, Swansea, UK
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
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  • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

    A. Croot, KLA Corporation (SPTS Division)
    B. Jones, Swansea University
    J. Mitchell, KLA Corporation (SPTS Division)
    Huma Ashraf, KLA Corporation (SPTS Division)
    M. Jennings, Swansea University
    Janet Hopkins, KLA Corporation (SPTS Division)
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),

    3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

  • 12.9 – Low Damage Chlorine-Based Dry Etch for Fabrication of Ga2O3 FinFETs and Trench Diodes

    X. Zhai, University of Michigan
    Z. Wen, University of Michigan
    J. Burnett, KLA Corporation (SPTS Division)
    J. Mitchell, KLA Corporation (SPTS Division)
    C. Bolton, KKLA Corporation SPTS, Newport, UK
    K. Roberts, KLA Corporation (SPTS Division)
    E. Walsby, KLA Corporation (SPTS Division)
    Huma Ashraf, KLA Corporation (SPTS Division)
    R. L. Peterson, University of Michigan
    E. Ahmadi, University of California Los Angeles

    12.9 Final.2025

    Abstract
    The impact of chlorine-based etch conditions on etch profile and etched-surface quality was investigated. For this purpose, ALD HfSiOx/Ga2O3 trench-MOSCAPs were utilized as the test structure to understand the impact of etch conditions on sidewall quality (e.g. sidewall roughness and process-induced damage). UV-assisted capacitance-voltage measurements were employed to quantify the interface trap density.