Hye-Hyun Kim

School of Electronic and Electrical Engineering, Kyungpook National University

  • 2.5.2023 Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

    In-Geun Lee, Kyungpook National University
    Hyeon-Bhin Jo, School of Electronic and Electrical Engineering, Kyungpook National University
    Wan-Soo Park, Kyungpook National University
    Ji-Hoon Yoo, School of Electronic and Electrical Engineering, Kyungpook National University
    Jacob Yun, QSI
    Ted Kim, QSI
    Takuya Tsutsumi, QSI, Cheon-An, Kyunggi-do, 31044, South Korea
    Hiroki Sugiyama, NTT Device Technology Laboratories, NTT Corporation, Kanagawa, Japan
    Jae-Hak Lee, Kyungpook National University
    Dae-Hyun Kim, Kyungpook National University

    2.5,2023_Lee_Final_Paper