Hyeyoung Jung

Wavice Inc.
  • Qualification of Wavice Baseline GaN HEMT process with 0.4 um gate on 4” SiC wafers

    Hosang Kwon, Agency for Defense Development
    Sangmin Lee, Wavice Inc.
    Byoungchul Jun, Wavice Inc.
    Chulsoon choi, Wavice Inc.
    Hyeyoung Jung, Wavice Inc.
    Seokgyu Choi, Wavice Inc.
    Min Han, Wavice Inc.
    Ho Geun Lee, Wavice Inc.
    Myoungkeun Song, Wavice Inc.
    Sung Won Lee, Wavice Inc.
    Young Jae Kim, Wavice Inc.
    Jihun Kwon, Wavice Inc.
    Myoungsoo Park, Wavice Inc.
    Sewon Hwang, Wavice Inc.
    Hangyol Ji, Wavice Inc.

    The performance and reliability of AlGaN/AlN/GaN HEMT on 4 inch semi-insulating SiC substrate fabricated with baseline GaN HEMT process of Wavice Inc. have been reported. The baseline process of Wavice Inc. includes AlxGa1-xN/AlN/u-GaN/Fe-GaN epi structure with x=22%, Si+ ion implanted and recess etched ohmic, 0.4 um gate length, Ni based gamma Gate, electro plated void free source connected field plate (SCFP), 5 um thick electro plated interconnect metal, 85 um SiC substrate thickness after grinding, through SiC via directly to the source ohmic metal with sloped side wall, 7 um thick electro plated back side metal. To qualify the process technology, 3 non-consecutive lots were produced. DC/RF characterization and a list of reliability tests have been done on randomly selected devices.

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  • 4.2.2023 Design and Fabrication of Millimeter-Wave GaN HEMTs

    Keisuke Shinohara, Teledyne Scientific Company
    Dean Regan, Teledyne Scientific Company
    Casey King, Teledyne Scientific Company
    Eric Regan, Teledyne Scientific Company
    Petra Rowell, Teledyne Scientific Company
    Andrea Arias, Teledyne Scientific Company
    Andrew Carter, Teledyne Scientific Company
    Joshua Bergman, Teledyne Scientific Company
    Miguel Urteaga, Teledyne Scientific Company
    Berinder Brar, Teledyne Scientific Company

    4.2.2023 CS_MANTECH_2023_Keisuke_Shinohara_Teledyne_paper_4.2