I. Wathuthanthri

Northrop Grumman (MS), Linthicum, MD

  • Productization of the Superlattice Castellated Field Effect Transistor

    Justin Parke, Northrop Grumman Mission Systems
    I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
    Ken Nagamatsu, Northrop Grumman Mission Systems
    Josephine Chang, Northrop Grumman Mission Systems
    Georges Siddiqi, HRL Laboratories
    R. Lewis, Northrop Grumman (MS), Linthicum, MD
    Robert Howell, Northrop Grumman Mission Systems

    NGMS reports the maturation of a novel GaN based 3D transistor with state of the art RF switch performance, named the SLCFET (Super Lattice Castellated Field Effect Transistor), with an RF switch FOM greater than 1.8 THz. The configured process has undergone reliability qualification for production.

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  • May 11, 2022 // 5:10pm

    11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology

    Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
    R. Lewis, Northrop Grumman (MS), Linthicum, MD
    J. Mason, Northrop Grumman (MS), Linthicum, MD
    M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
    M. Snook, Northrop Grumman (MS), Linthicum, MD
    J. Parke, Northrop Grumman (MS), Linthicum, MD
    K. Renaldo, Northrop Grumman (MS), Linthicum, MD
    M. Lee, Northrop Grumman (MS), Linthicum, MD
    Robert Howell, Northrop Grumman Corporation
    I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD
    J. Daubert, Northrop Grumman (MS), Linthicum, MD
    J. Kelliher, Northrop Grumman (MS), Linthicum, MD
    N. Edwards, Northrop Grumman (MS), Linthicum, MD
    B. Alt, Northrop Grumman (MS), Linthicum, MD
    J.T. Mlack, Northrop Grumman (MS), Linthicum, MD
    A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD
    B. Novak, Northrop Grumman (MS), Linthicum, MD
    J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD
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