Indranee Sanyal

University of Bristol

  • 15.1.2023 A review of current developments in the semiconductor industry and measures being taken by Japanese manufacturers

    15.1.2023 CS_MANTECH-Final-Paper-Orbray

  • 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates

    Zequan Chen, University of Bristol
    Peng Huang, University of Bristol
    Indraneel Sanyal, University of Bristol
    Matthew Smith, University of Bristol
    Michael J Uren, University of Bristol
    A. Vohra, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    Martin Kuball, University of Bristol
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  • 7A.3 – Heteroepitaxial Growth of α-Ga2O3 by MOCVD on a, m, r and c-Plane Sapphire

    K. D. Ngo, University of Bristol
    Indranee Sanyal, University of Bristol
    Matthew Smith, University of Bristol
    M. Kuball, University of Bristol, Bristol, UK

    7A.3 Final.2025

    Abstract
    With a wide bandgap of 5.4 eV, α-Ga2O3 is a promising material for high-breakdown power devices and solar-blind photodetectors but is difficult to grow due its metastability. Sapphire, being isostructural to α-Ga2O3, is therefore the substrate of choice to stabilise epitaxial layers of α-Ga2O3. Since each sapphire plane imposes different surface energy and strain conditions on the epitaxial layer, the choice of substrate orientation is critical to the stabilisation of α-phase. In this work, Ga2O3 thin films were deposited simultaneously on (11-20), a-plane, (10-10) m-plane, (0001) c-plane, and (01-12) r-plane sapphire substrates using metal-organic chemical vapour deposition (MOCVD), and XRD analysis was performed to confirm the resultant phase of Ga2O3 on each plane. We found that, under the same conditions, Ga2O3 assumed β phase on c-plane, mixed phase α & β on a-plane and r-plane, and pure α phase on m-plane. These results indicate that m-plane is most conducive to growing phase-pure α-Ga2O3 layers via MOCVD, and could open opportunities for future device manufacturing.