In this work we compare non-contact charge-voltage imaging and UV-photoluminescence (UV-PL) imaging of yield killer defects in epitaxial 4H-SiC wafers. Two significant findings are based on macro- and micro-scale imaging, respectively. 1- Whole wafer images demonstrate that only a fraction of the UV-PL defects in triangular, downfall and carrot categories are electrically active. 2- Micro-scale images reveal similarities and differences between PL and electrical defect images. Presented for the first time, micrometer resolution leakage patterns within triangular defects are consistent with the microstructure modeling in reference 1. The results imply that the depletion layer leakage within killer defects corresponds to exposed 3C-SiC polytypes. This leakage may be a consequence of the lower 2.2eV energy gap of 3C-SiC compared to 3.3eV in 4H-SiC.
J. Lagowski
Semilab SDI
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Micro-scale Imaging of Electrical Activity of Yield Killer Defects in 4H-SiC with Charge Assisted KFM and UV-Photoluminescence
J. Lagowski, Semilab SDIMarshall Wilson, Semilab SDI, Tampa, FL,David Greenock, X-FabDmitriy Marinskiy, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDIAnthony Ross III, Semilab SDICarlos Almeida, Semilab SDIB. Schrayer, Semilab SDIJohn D’Amico, Semilab SDIDownload Paper -
11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDIDmitriy Marinskiy, Semilab SDI, Tampa, FL,J. Lagowski, Semilab SDI -
5.6 Non-contact Characterization of Bias Stress-Induced Instability of 2DEG in SiN/AlGaN/GaN Structures
Marshall Wilson, Semilab SDI, Tampa, FL,A. Savtchouk, Semilab SDICarlos Almeida, Semilab SDIAndrew Findlay, Semilab SDIJ. Lagowski, Semilab SDI -
May 19, 2022 // 1:50pm
17.2 Top Surface Edge Contact for Wafer Level Electrical Characterization of 2DEG in AlGaN/GaN on Semi-insulating Wafers
Dmitriy Marinskiy, Semilab SDI, Tampa, FL,B. Schrayer, Semilab SDIMark Benjamin, Lehighton Electronics Inc,J. Lagowski, Semilab SDIMarshall Wilson, Semilab SDI, Tampa, FL,D. Nguyen, Semilab LEI, Lehighton, PADownload PaperLoading... -
2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
Dmitriy Marinskiy, Semilab SDI, Tampa, FL,M. Wilson, Semilab SDICarlos Almeida, Semilab SDIS. Savtchouk, Semilab SDI,J. Lagowski, Semilab SDIS. Toth, Semilab ZRTL. Badeeb, Semilab ZRTA. Faragó, Semilab ZRTDownload PaperLoading... -
2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
M. Wilson, Semilab SDIDavid Greenock, X-FabDmitriy Marinskiy, Semilab SDI, Tampa, FL,Carlos Almeida, Semilab SDIJohn D’Amico, Semilab SDIJ. Lagowski, Semilab SDIDownload PaperLoading... -
15.4.2023 Noncontact Measurement of Doping with Enhanced Throughput and High Precision for Wide Bandgap Wafer Manufacturing
M. Wilson, Semilab SDICarlos Almeida, Semilab SDII. Shekerov, Semilab SDIB. Schrayer, Semilab SDIA. Savtchouk, Semilab SDIB. Wilson, Semilab SDIJ. Lagowski, Semilab SDI -
11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
M. Wilson, Semilab SDICarlos Almeida, Semilab SDII. Shekerov, Semilab SDIB. Schrayer, Semilab SDIA. Savtchouk, Semilab SDIB. Wilson, Semilab SDIJ. Lagowski, Semilab SDILoading...