The super-lattice power amplifier with diamond enhanced superjunctions (SPADES) is a device that incorporates nanocrystalline diamond superjunctions into the super-lattice castellated field effect transistor (SLCFET), to improve breakdown voltage. A diamond superjunction is formed with p-type nanocrystalline diamond to balance mutual depletion between the two-dimensional electron gas superlattices and the doped diamond in order to reduce the peak electric field in the drain access region. Formation of the diamond superjunction presents several challenges, such as managing diamond conformality, strain, and control over p-type doping. Optimization of diamond growth led to conformal films, with low stress, and linear dependence hole concentration from p-type doping, suitable for the SPADES device.
ASEE Postdoctoral Fellow Residing at NRL
Formation of Diamond Superjunctions to Enable GaN-Based Super-Lattice Power Amplifiers with Diamond Enhanced Superjunctions (SPADES)Geoffrey Foster, Jacobs Inc., Washington DCTatyana Feygelson, Naval Research LaboratoryJames Gallagher, ASEE Postdoctoral Fellow Residing at NRLJosephine Chang, Northrop GrummanShamima Afroz, Northrop GrummanKen Nagamatsu, Northrop GrummanRobert Howell, Northrop GrummanFritz Kub, Naval Research LaboratoryDownload Paper
10.5.2023 Accuracy of Machine Learning Models on Predicting the Properties of Vertical GaN DiodesJames Gallagher, U.S. Naval Research LaboratoryMichael A. Mastro, U.S. Naval Research LaboratoryMona Ebrish, Vanderbilt University, Nashville, TNAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBrendan. P. Gunning, Sandia National Labs, Albuquerque, NMRobert Kaplar, Sandia National Labs, Albuquerque, NM