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Jan Grünenpütt
United Monolithic Semiconductors France
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May 02, 2019 // 3:40pm – 4:30pm
18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs
Sandra Riedmüller, United Monolithic Semiconductors GmbHJan Grünenpütt, United Monolithic Semiconductors FranceManfred Madel, United Monolithic Semiconductors GmbHFerdinand Scholz, Inst. Of Functional Nanosystems University of UlmHervé Blanck, United Monolithic Semiconductors -
3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
Hermann Stieglauer, United Monolithic Semiconductors GermanyKlaus Riepe, United Monolithic Semiconductorss GmBHJanina Moereke, United Monolithic Semiconductorss GmBHJan Grünenpütt, United Monolithic Semiconductors FranceHervé Blanck, United Monolithic SemiconductorsDaniel Sommer, United Monolithic Semiconductorss GmBHBenoît Lambert, United Monolithic Semiconductors GermanyJerome Van de Casteele, United Monolithic Semiconductorss SASMehdy Neffati, United Monolithic Semiconductorss SASUlli Hansen, MSG Lithoglas GmbHSimon Maus, MSG Lithoglas GmbHDownload Paper -
8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology
Jan Grünenpütt, United Monolithic Semiconductors FranceDaniel Sommer, United Monolithic Semiconductorss GmBHJörg Splettstößer, United Monolithic Semiconductors – GmbHOlof Kordina, SweGaN ABJr-Tai Chen, SweGaN ABHermann Stieglauer, United Monolithic Semiconductors GermanyHervé Blanck, United Monolithic SemiconductorsDownload PaperLoading...