Jan Grünenpütt

United Monolithic Semiconductors France
  • May 02, 2019 // 3:40pm – 4:30pm

    18.12 Comparative investigation of lattice-matched ternary and quaternary barriers for GaN-based HEMTs

    Sandra Riedmüller, United Monolithic Semiconductors GmbH
    Jan Grünenpütt, United Monolithic Semiconductors France
    Manfred Madel, United Monolithic Semiconductors GmbH
    Ferdinand Scholz, Inst. Of Functional Nanosystems University of Ulm
    Hervé Blanck, United Monolithic Semiconductors
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  • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Klaus Riepe, United Monolithic Semiconductorss GmBH
    Janina Moereke, United Monolithic Semiconductorss GmBH
    Jan Grünenpütt, United Monolithic Semiconductors France
    Hervé Blanck, United Monolithic Semiconductors
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Benoît Lambert, United Monolithic Semiconductors Germany
    Jerome Van de Casteele, United Monolithic Semiconductorss SAS
    Mehdy Neffati, United Monolithic Semiconductorss SAS
    Ulli Hansen, MSG Lithoglas GmbH
    Simon Maus, MSG Lithoglas GmbH
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  • 8.2.2021 Evaluation of novel iron-free QuanFINE® structure by 100nm and 150nm AlGaN/GaN HEMT technology

    Jan Grünenpütt, United Monolithic Semiconductors France
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Jörg Splettstößer, United Monolithic Semiconductors – GmbH
    Olof Kordina, SweGaN AB
    Jr-Tai Chen, SweGaN AB
    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Hervé Blanck, United Monolithic Semiconductors
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