The main objective of the Covered Gallium Nitride (CoGaN) project is the demonstration of the electrical performance of a GaN HPA in a frequency range between 25 GHz and 40 GHz with a maximal output power of 5 W in a chip scale packaging technology for 5G applications. In addition, requirements are existing for reliability testing at THB condition of 85°C/85% rel. humidity. In this work a test vehicle circuit with a pre matched 1 mm transistor is used for showing the process feasibility.
Wafer Level Packaging for Electronic RF Systems Using GaN TechnologiesUlli HansenHermann Stieglauer, United Monolithic Semiconductors GmbHKlaus RiepeJanina MoerekeDownload Paper
9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power ApplicationsJanina MoerekeErwan Morvan, CEA, LetiWilliam Vandendaele, CEA, LetiFabienne Allain, CEA, LetiAlphonse Torres, CEA, LetiMatthew Charles, CEA, LetiMarc Plissonnier, CEA, Leti