The main objective of the Covered Gallium Nitride (CoGaN) project is the demonstration of the electrical performance of a GaN HPA in a frequency range between 25 GHz and 40 GHz with a maximal output power of 5 W in a chip scale packaging technology for 5G applications. In addition, requirements are existing for reliability testing at THB condition of 85°C/85% rel. humidity. In this work a test vehicle circuit with a pre matched 1 mm transistor is used for showing the process feasibility.
Janina Moereke
United Monolithic Semiconductorss GmBH
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Wafer Level Packaging for Electronic RF Systems Using GaN Technologies
Ulli Hansen, MSG Lithoglas GmbHHermann Stieglauer, United Monolithic Semiconductors GmbHKlaus Riepe, United Monolithic Semiconductorss GmBHJanina Moereke, United Monolithic Semiconductorss GmBHDownload Paper -
9.2 Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications
Download PaperJanina Moereke, United Monolithic Semiconductorss GmBHErwan Morvan, CEA, LetiWilliam Vandendaele, CEA, LetiFabienne Allain, CEA, LetiAlphonse Torres, CEA, LetiMatthew Charles, CEA, LetiMarc Plissonnier, CEA, Leti -
3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test
Hermann Stieglauer, United Monolithic Semiconductors GermanyKlaus Riepe, United Monolithic Semiconductorss GmBHJanina Moereke, United Monolithic Semiconductorss GmBHJan Grünenpütt, United Monolithic Semiconductors FranceHervé Blanck, United Monolithic SemiconductorsDaniel Sommer, United Monolithic Semiconductorss GmBHBenoît Lambert, United Monolithic Semiconductors GermanyJerome Van de Casteele, United Monolithic Semiconductorss SASMehdy Neffati, United Monolithic Semiconductorss SASUlli Hansen, MSG Lithoglas GmbHSimon Maus, MSG Lithoglas GmbHDownload Paper[embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/3.2.2021-Wafer-level-packaging_Humidity-testing_submitted-on-210401.pdf” download=”all” viewer=”google”]