Jinman Jin

Wavice Inc.
  • May 01, 2019 // 11:20am – 11:40am

    8.3 GaN quasi-MMIC HPAs with IPDs on HRS using via first TSV process

    Jinman Jin, Wavice Inc.
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  • May 10, 2022 // 2:50pm

    3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate

    Jinman Jin, Wavice Inc.
    Byoungchul Jun, Wavice Inc.
    Chulsoon choi, Wavice Inc.
    Seokgyu Choi, Wavice Inc.
    Min Han, Wavice Inc.
    Myoungkeun Song, Wavice Inc.
    Jihun Kwon, Wavice Inc.
    Myungsoo Park, Wavice Inc.,
    Sangmin Lee, Wavice Inc.
    Hogeun Lee, Wavice Inc.,
    Inseop Kim, Wavice Inc.,
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  • 1.4.2023 Production of High-Reliability 150mm GaN HEMT for 5G Base Station

    Kazuaki Matsuura, Sumitomo Electric Device Innovations USA
    T. Watanabe, Sumitomo Electric Device Innovations Japan
    T. Kosaka, Sumitomo Electric Device Innovations, Japan
    S. Kitajima, Sumitomo Electric Device Innovations, Japan
    P. Mushini, Coherent Corp.
    J. Bellotti, Coherent Corp.
    G. Gedzberg, Coherent Corp.

    1.4.2023-Kazuaki Matsuura_Production of High-Reliability 150mm GaN HEMT for 5G Base Station (final)