Kelson Chabak.

Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA

  • Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V Measurements

    Kelson Chabak., Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Cathy Lee, Qorvo Inc.
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Andy Xie, Qorvo
    Edward Beam, QORVO
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Robert Fitch, AFRL
    James Gillespie, Air Force Research Laboratory
    Andrew Green, Air Force Research Laboratory, Sensors Directorate

    We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.

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  • 7.3.2023 Scaled ?-Ga2O3 MOSFETs with Pulsed Laser Deposition-Regrown Ohmics

    Daniel M. Dryden, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Hyung Min Jeon, KBR Inc.,
    Kyle Liddy, Air Force Research Laboratory
    Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Jeremiah C. Williams, Air Force Research Laboratory, Sensors Directorate
    Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Nolan S. Hendricks, Air Force Research Laboratory, Sensors Directorate
    Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

    7.3.2023 CSMantechExtendedAbstract4

  • 12.2.2023 High Temperature Studies of 140 nm T-gate AlGaN/GaN HEMT Devices

    Ahmad Islam, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Adam Miesle, KBR Inc.
    Nicholas P. Sepelak, KBR, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Hanwool Lee, KBR Inc.
    Dennis E. Walker Jr., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    N. Miller, Air Force Research Laboratory
    Matt Grupen, Air Force Research Laboratory, Sensors Directorate
    Kyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Gary Hughes, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
    Wenjuan Zhu, University of Illinois, Urbana
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew J. Green, Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,

    12.2.2023_CSMANTECH_FinalPaper_HT_Islam_rev