11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm
Kohei Sasaki
Novel Crystal Technology, Inc
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13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching
Download PaperMasataka Higashiwaki, National Institute of Information and Communications TechnologyMan Hoi Wong, National Institute of Information and Communications TechnologyKeita Konishi, Tokyo University of Agriculture and TechnologyChia-Hung Lin, National Institute of Information and Communications TechnologyNaoki Hatta, SICOXS CorporationKuniaki Yagi, SICOXS CorporationKen Goto, Tamura CorporationKohei Sasaki, Novel Crystal Technology, IncAkito Kuramata, Novel Crystal Technology, IncShigenobu Yamakoshi, Tamura CorporationHisashi Murakami, Tokyo University of Agriculture and TechnologyYoshinao Kumagai, Tokyo University of Agriculture and Technology -
11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor
Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRLJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLTatyana Feygelson, Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechTatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de MadridJennifer K. Hite, Naval Research LaboratoryDaniel Pennachio, U.S. Naval Research Laboratory, Washington DCAlan Jacobs, U.S. Naval Research Laboratory, Washington DCBoris Feygelson, U.S. Naval Research LaboratoryKohei Sasaki, Novel Crystal TechnologyAkito Kuramata, Novel Crystal Technology, IncPai-Ying Liao, Purdue UniversityPeide Ye, Purdue UniversityBradford Pate, Naval Research LaboratoryTravis J. Anderson, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research Laboratory