Kohei Sasaki

Novel Crystal Technology, Inc

  • 13.3 Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

    Masataka Higashiwaki, National Institute of Information and Communications Technology
    Man Hoi Wong, National Institute of Information and Communications Technology
    Keita Konishi, Tokyo University of Agriculture and Technology
    Chia-Hung Lin, National Institute of Information and Communications Technology
    Naoki Hatta, SICOXS Corporation
    Kuniaki Yagi, SICOXS Corporation
    Ken Goto, Tamura Corporation
    Kohei Sasaki, Novel Crystal Technology, Inc
    Akito Kuramata, Novel Crystal Technology, Inc
    Shigenobu Yamakoshi, Tamura Corporation
    Hisashi Murakami, Tokyo University of Agriculture and Technology
    Yoshinao Kumagai, Tokyo University of Agriculture and Technology
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  • 11.4.2023 Nanocrystalline Diamond-Capped β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FieldEffect Transistor

    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Tatyana Feygelson, U. S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Tatyana I. Feygelson, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid
    Jennifer K. Hite, Naval Research Laboratory
    Daniel Pennachio, U.S. Naval Research Laboratory, Washington DC
    Alan Jacobs, U.S. Naval Research Laboratory
    Boris Feygelson, U.S. Naval Research Laboratory
    Kohei Sasaki, Novel Crystal Technology
    Akito Kuramata, Novel Crystal Technology, Inc
    Pai-Ying Liao, Purdue University
    Peide D. Ye, Purdue University
    Bradford Pate, Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Marko J. Tadjer, U.S. Naval Research Laboratory

    11.4.2023_Masten- NCD HFET- 2023 CS Mantech – final paper_hnm