Kyekyoon Kim

University of Illinois at Urbana-Champaign
  • May 02, 2019 // 2:50pm – 3:10pm

    17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations

    Fawad Ismail, University of Illinois at Urbana-Champaign
    Kyekyoon Kim, University of Illinois at Urbana-Champaign
    Matthew Landi, University of Illinois at Urbana-Champaign
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  • May 12, 2022 // 1:50pm

    16.2 Investigation of Silicon Nitride Shadowed Selective Area Growth as an Enabling Technology for GaN Vertical Device Processing

    Matthew Landi, University of Illinois at Urbana-Champaign
    Frank Kelly, University of Illinois at Urbana-Champaign
    Kyekyoon Kim, University of Illinois at Urbana-Champaign

    Student Presentation

    Abstract

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  • May 12, 2022 // 3:20pm

    18.7 Role of Substrate on the Reverse Leakage Behavior of the Vertical GaN Devices

    Riley Vesto, University of Illinois at Urbana-Champaign
    Kyekyoon Kim, University of Illinois at Urbana-Champaign
    Matthew Pianfetti, University of Illinois Urbana-Champagne
    Luke Hartmann, University of Illinois Urbana-Champagne
    Rebekah Wilson, U.S, Army Construction Engineering Research Laboratory
    Hyungsoo Choi, University of Illinois Urbana-Champagne and Holonyak Micro and Nanotechnology Laboratory

    Student Presentation

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  • May 12, 2022 // 3:20pm

    18.10 Processing of Vertical GaN Power Devices via Silicon Nitride Shadowed Selective Area Growth

    Frank Kelly, University of Illinois at Urbana-Champaign
    Matthew Landi, University of Illinois at Urbana-Champaign
    Kyekyoon Kim, University of Illinois at Urbana-Champaign

    Student Presentation

    Abstract

     

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