M. Heuken

AIXTRON SE Germany
  • March 10, 2022 // 8:45am

    13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

    Cem Basceri, QROMIS, USA
    Vlad Odnoblyudov, QROMIS, USA
    O. Aktas, Sandia National Labs, Albuquerque, NM
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
    Karen Geens, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    D. Fahle, AIXTRON SE Germany
    Stefaan Decoutere, Imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    M. Heuken, AIXTRON SE Germany

    Invited Presentation

    Loader Loading...
    EAD Logo Taking too long?

    Reload Reload document
    | Open Open in new tab

    Download [8.31 MB]

    Download Paper