Invited Presentation
M. Heuken
AIXTRON SE Germany
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March 10, 2022 // 8:45am
13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
Cem Basceri, QROMIS, USAVlad Odnoblyudov, QROMIS, USAO. Aktas, Sandia National Labs, Albuquerque, NMWalter Wohlmuth, Vanguard International Semiconductor Corporation, TaiwanKaren Geens, imec, Leuven, BelgiumBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumH. Hahn, AIXTRON SE, Herzogenrath, GermanyD. Fahle, AIXTRON SE GermanyStefaan Decoutere, Imec, Leuven, BelgiumA. Vohra, imec, Leuven, BelgiumM. Heuken, AIXTRON SE GermanyDownload PaperLoading...
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6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
C. Basceri, Qromis, Inc.V. Odnoblyudov, Qromis, inc.C. Kurth, Qromis, Inc.M. Yamada, SHIN-ETSU CHEMICAL Co., LtdS. Konishi, SHIN-ETSU CHEMICAL Co., LtdM. Kawahara, SHIN-ETSU CHEMICAL Co., LtdC.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpS. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpJ. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR CorpKaren Geens, imec, Leuven, BelgiumA. Vohra, imec, Leuven, BelgiumH. De Pauw, CMST, imec & Ghent UniversityBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumS. Decoutere, imecH. Hahn, AIXTRON SEM. Heuken, AIXTRON SEK. Tanigawa, OKI ELECTRIC INDUSTRY Co., LtdLoading...