M.J. Uren

University of Bristol, Bristol, UK

  • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

    M.J. Uren, University of Bristol, Bristol, UK
    M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
    M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J. W. Pomeroy, University of Bristol, Bristol, UK
    G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
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  • May 11, 2022 // 4:50pm

    11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

    M.J. Uren, University of Bristol, Bristol, UK
    M. Kuball, University of Bristol, Bristol, UK
    B. Shankar, University of Bristol, Bristol, UK
    D. Ji, University of Bristol, Bristol, UK
    Y. Cao, University of Bristol, Bristol, UK

    Student Presentation

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  • 11.2.3.2024 Time-Dependent Conduction Mechanisms in Superlattice Layers on 200 mm Engineered Substrates

    Zequan Chen, University of Bristol
    Peng Huang, University of Bristol
    Indraneel Sanyal, University of Bristol
    Matthew Smith, University of Bristol
    Michael J Uren, University of Bristol
    A. Vohra, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    Martin Kuball, University of Bristol
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