M.J. Uren

University of Bristol, Bristol, UK

  • Need for Defects in Floating-Buffer AlGaN/GaN HEMTs

    M.J. Uren, University of Bristol, Bristol, UK
    M. Silvestri, University of Bristol, NXP Semiconductors Belgium and Netherlands
    M. Cäsar, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J. W. Pomeroy, University of Bristol, Bristol, UK
    G.A.M. Hurkx*, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J.A. Croon+, University of Bristol, NXP Semiconductors Belgium and Netherlands
    J. Šonský*, University of Bristol, NXP Semiconductors Belgium and Netherlands
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  • May 11, 2022 // 4:50pm

    11.2 Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation

    M.J. Uren, University of Bristol, Bristol, UK
    M. Kuball, University of Bristol, Bristol, UK
    B. Shankar, University of Bristol, Bristol, UK
    D. Ji, University of Bristol, Bristol, UK
    Y. Cao, University of Bristol, Bristol, UK

    Student Presentation

    Abstract

     

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