M Jennings

Swansea University
  • Exploring the Challenges of Galiium Arsenide Plasma Dicing

    Owen Guy, Swansea University
    Will Worster, Swansea University
    Matthew Day, SPTS Technologies Limited
    M Jennings, Swansea University
    Matt Elwin, Swansea University

    Plasma dicing of silicon wafers is beginning to move from pilot scale into mainstream production. Attention is now focusing on other market sectors which may benefit from a similar dicing approach.  The fragility of GaAs wafers leads to issues (such as wafer breakages, damage to die edges) during conventional wafer saw dicing. Although LASER techniques have been developed, they also have their own drawbacks – specifically sidewall quality.  A systematic investigation of the current capabilities of plasma dicing of GaAs substrates has been performed, developing technology which is both practical and economically viable. Preliminary results show smooth vertical sidewalls of trenches suitable for dicing thinned GaAs substrates at etch rates up to 23μm min-1.

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  • Plasma Dicing for High Yield SiC Singulation

    A. Croot, KLA Corporation (SPTS Division)
    B. Jones, Swansea University
    J. Mitchell, KLA Corporation (SPTS Division)
    Huma Ashraf, KLA Corporation (SPTS Division)
    M Jennings, Swansea University
    Janet Hopkins, KLA Corporation (SPTS Division)
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),
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