M. Wilson
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2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
M. Wilson, Semilab SDIDavid Greenock, X-FabDmitriy Marinskiy, Semilab SDI, Tampa, FL,Carlos Almeida, Semilab SDIJohn D’Amico, Semilab SDIJ. Lagowski, Semilab SDIDownload PaperLoading...
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2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
Dmitriy Marinskiy, Semilab SDI, Tampa, FL,M. Wilson, Semilab SDICarlos Almeida, Semilab SDIS. Savtchouk, Semilab SDI,J. Lagowski, Semilab SDIS. Toth, Semilab ZRTL. Badeeb, Semilab ZRTA. Faragó, Semilab ZRTDownload PaperLoading...
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15.4.2023 Noncontact Measurement of Doping with Enhanced Throughput and High Precision for Wide Bandgap Wafer Manufacturing
M. Wilson, Semilab SDICarlos Almeida, Semilab SDII. Shekerov, Semilab SDIB. Schrayer, Semilab SDIA. Savtchouk, Semilab SDIB. Wilson, Semilab SDIJ. Lagowski, Semilab SDI -
11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
M. Wilson, Semilab SDICarlos Almeida, Semilab SDII. Shekerov, Semilab SDIB. Schrayer, Semilab SDIA. Savtchouk, Semilab SDIB. Wilson, Semilab SDIJ. Lagowski, Semilab SDILoading...
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10B.2 – Macro and Micro-Scale Non-Contact Imaging of Electrically Active Extended Defects in Merged PiN Schottky Diode Devices
F. Faisal, NexperiaN. Steller, NexperiaR. Karhu, Fraunhofer IISBB. Kallinger, Fraunhofer IISBG. Polisski, Semilab Germany GmbHM. Wilson, Semilab SDIA. Savtchouk, Semilab SDIL. Guitierrez, Semilab SDICarlos Almeida, Semilab SDIC. Soto, Semilab SDIB. Wilson, Semilab SDIDmitriy Marinskiy, Semilab SDI, Tampa, FL,A. Wincukiewicz, Semilab SDIJ. Lagowski, Semilab SDIAbstract
This study presents a novel approach to device yield estimation based on the non-contact, corona-based QUAD(Quality, Uniformity, and Defects) technique for inline defect mapping in SiC epitaxial layers. The approach is applied to a merged PiN Schottky diode manufacturing process and is compared to final wafer level electrical data. A new analysis method for QUAD defect mapping is introduced, incorporating die yield bin maps based on indie depletion voltage values, allowing for a direct comparison with final electrical device performance. Micro-scale, QUAD and voltage data within each individual diode can gain further insight into the electrical nature of the defects causing the device failure. The results demonstrate a strong correlation between the inline QUAD bin map results and final device electrical properties, highlighting the potential of QUAD as a practical and powerful inline tool. This technique offers a complementary approach to UVPL defect imaging, identifying electrically active defects and enhancing estimations of the final production yield.