M. Wilson

Semilab SDI

  • 2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects

    M. Wilson, Semilab SDI
    David Greenock, X-Fab
    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    Carlos Almeida, Semilab SDI
    John D’Amico, Semilab SDI
    J. Lagowski, Semilab SDI
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  • 2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC

    Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
    M. Wilson, Semilab SDI
    Carlos Almeida, Semilab SDI
    S. Savtchouk, Semilab SDI,
    J. Lagowski, Semilab SDI
    S. Toth, Semilab ZRT
    L. Badeeb, Semilab ZRT
    A. Faragó, Semilab ZRT
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  • 15.4.2023 Noncontact Measurement of Doping with Enhanced Throughput and High Precision for Wide Bandgap Wafer Manufacturing

    M. Wilson, Semilab SDI
    Carlos Almeida, Semilab SDI
    I. Shekerov, Semilab SDI
    B. Schrayer, Semilab SDI
    A. Savtchouk, Semilab SDI
    B. Wilson, Semilab SDI
    J. Lagowski, Semilab SDI

    15.4.2023 Marshall Wilson SDI CSMantech 2023 Photoneutralization Manuscript rev3

  • 11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies

    M. Wilson, Semilab SDI
    Carlos Almeida, Semilab SDI
    I. Shekerov, Semilab SDI
    B. Schrayer, Semilab SDI
    A. Savtchouk, Semilab SDI
    B. Wilson, Semilab SDI
    J. Lagowski, Semilab SDI
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