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2.4.2021 The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects
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2.6.2021 Kelvin Force Microscopy and Micro-Raman Correlation Study of Triangular Defects in 4H-SiC
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15.4.2023 Noncontact Measurement of Doping with Enhanced Throughput and High Precision for Wide Bandgap Wafer Manufacturing
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11.2.4.2024 High Throughput Wafer Characterization for Manufacturing Needs of SiC and Other WBG Technologies
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10B.2 – Macro and Micro-Scale Non-Contact Imaging of Electrically Active Extended Defects in Merged PiN Schottky Diode Devices
Abstract
This study presents a novel approach to device yield estimation based on the non-contact, corona-based QUAD(Quality, Uniformity, and Defects) technique for inline defect mapping in SiC epitaxial layers. The approach is applied to a merged PiN Schottky diode manufacturing process and is compared to final wafer level electrical data. A new analysis method for QUAD defect mapping is introduced, incorporating die yield bin maps based on indie depletion voltage values, allowing for a direct comparison with final electrical device performance. Micro-scale, QUAD and voltage data within each individual diode can gain further insight into the electrical nature of the defects causing the device failure. The results demonstrate a strong correlation between the inline QUAD bin map results and final device electrical properties, highlighting the potential of QUAD as a practical and powerful inline tool. This technique offers a complementary approach to UVPL defect imaging, identifying electrically active defects and enhancing estimations of the final production yield.
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