Marko Tadjer

U.S. Naval Research Laboratory

  • 15.5.2023 Scalable Selective Area Doping for Manufacturing of Planar Vertical Power GaN Devices

    Alan Jacobs, U.S. Naval Research Laboratory
    Boris N. Feigelson, Naval Research Laboratory
    Jennifer Hite, U.S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Marko Tadjer, U.S. Naval Research Laboratory
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory

    15.5.2023 Alan Jacobs CS Mantech ExtAbstract_submission2

  • 2.1.3.2024 Experimentally Validated Innovative Edge Termination for Vertical GaN Diodes

    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Daniel G. Georgiev, University of Toledo, Toledo OH
    Andrew Koehler, U. S. Naval Research Laboratory
    Raghav Khanna, University of Toledo, Toledo OH
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
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