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May 02, 2019 // 2:50pm – 3:10pm
17.4 Analysis of High Mg-Incorporation into GaN via PAMBE Modulation Doping and Molecular Dynamics Simulations
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May 12, 2022 // 1:50pm
16.2 Investigation of Silicon Nitride Shadowed Selective Area Growth as an Enabling Technology for GaN Vertical Device Processing
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May 12, 2022 // 3:20pm
18.10 Processing of Vertical GaN Power Devices via Silicon Nitride Shadowed Selective Area Growth
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15.3.2023 Characterization of Nitridated Ga2O3 for GaN-on-Ga2O3 Power Device Applications
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12.2 – Crystallographic Dependency of β-Ga2O3 Nitridation via RF Nitrogen Plasma for GaN Heteroepitaxy
Abstract
RF-plasma assisted nitridation was used to transform (100) -Ga2O3 to (0001) wurtzite GaN and subsequently grow a 520 nm p-GaN cap layer over 5 intervals. The final step involved a 11.5 hour anneal at the growth temperature of 680 C to allow for equilibration inside the crystal body. The nitridated film was characterized via X-ray diffraction (XRD), which revealed peaks distinct from the (0001) family. Analysis of these distinct peaks revealed varying (𝒉𝟎𝒍) orientations. We theorize that the alternate orientations are forming to accommodate the growing GaN film, gradually shifting towards the ideal heteroepitaxy plane of (𝟐̅𝟎𝟏). XRD rocking curves of the (0002) GaN were used to analyze crystallinity as a function of thickness. Results showed a transformation at the 120 nm interval, from a single Gaussian-like peak to a broad-narrow dual peak configuration. The FWHM’s were extracted and plotted against a previous study, indicating narrower, improved peak of 20%. -
12.3 – Silicon Nitride Shadowed Selective Area Growth as a Device Processing Method for Heteroepitaxy of GaN on β-Ga2O3
Abstract
Silicon nitride shadowed selective area growth (SNS-SAG) for homoepitaxy of GaN via RF plasma-assisted molecular beam epitaxy (PAMBE) has been shown to avoid the defects that arise from conventional selective area processing methods such as inductively coupled plasma reactive ion etching (ICP-RIE) and ion implantation. This work investigates the extension of this method to improve the heteroepitaxy of GaN on β-Ga2O3 by modifying the makeup of the SNS-SAG mask. Gallium rich and nitrogen rich GaN films are grown with SNS-SAG masks on β-Ga2O3 substrates. While current device performance has yet to be optimized, the adapted SNS-SAG mask retains both function and structural integrity as shown by scanning electron microscopy (SEM).
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