Milton Feng

University of Illinois, Urbana-Champaign
  • 850 nm GaAs P-i-N Photodiodes for 50 Gb/s Optical Links with Dark Current below 1 pA

    Dufei Wu, University of Illinois at Urbana Champaign
    Yu-Ting Peng, University of Illinois, Urbana-Champaign
    Milton Feng, University of Illinois, Urbana-Champaign

    Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.

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  • May 10, 2022 // 3:20pm

    10.5 Hybrid Etching Process in Sub-micron Type-II GaAsSb/InP DHBT for 5G and millimeter-wave Power Amplification

    Yu-Ting Peng, University of Illinois at Urbana Champaign
    Xin Yu, University of Illinois at Urbana-Champaign
    Milton Feng, University of Illinois, Urbana-Champaign
    Yulin He, University of Illinois Urbana-Champagne

     

     

     

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