Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.
University of Illinois, Urbana-Champaign
850 nm GaAs P-i-N Photodiodes for 50 Gb/s Optical Links with Dark Current below 1 pADufei Wu, University of Illinois at Urbana ChampaignYu-Ting Peng, University of Illinois, Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignDownload Paper
May 10, 2022 // 3:20pm
10.5 Hybrid Etching Process in Sub-micron Type-II GaAsSb/InP DHBT for 5G and millimeter-wave Power AmplificationYu-Ting Peng, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignYulin He, University of Illinois Urbana-ChampagneDownload Paper