GaN is a promising material for more efficient high frequency and high voltage power switching. However, GaN still is not the common material for power electronics due to immature substrate, homoepitaxial growth, and processing technology. Electroluminescence is a promising method to predict failure points due to high field stress, which can assist in the separation of inherent defects stemming from substrate quality, and from process-induced defects as well as identify problems related to proper edge termination design. In this work, we compare the Electroluminescence signatures of devices on inhomogeneous substrates to DC I-V behavior to demonstrate the utility of the technique for process monitoring.
Vanderbilt University, Nashville, TN
Exploring the capability of Hyperspectral Electroluminescence for process monitoring in vertical GaN devicesKarl D. Hobart, U.S. Naval Research LaboratoryMona Ebrish, Vanderbilt University, Nashville, TNTravis J. Anderson, U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryJoseph Spencer, U.S. Naval Research Laboratory, Washington, DC, USA, Virginia TechJennifer Hite, U.S. Naval Research LaboratoryMichael Mastro, U.S. Naval Research LaboratoryDownload Paper
9.4.2023 Scalable Manufacturing of Planar, Large-Area 1.2kV and 3.3kV Vertical GaN PiN DiodesAlan Jacobs, U.S. Naval Research Laboratory, Washington DCMona Ebrish, NRC Postdoc Fellow Residing at the U.S. Naval Research LaboratoryJames Gallagher, U.S. Naval Research LaboratoryMarko J. Tadjer, U.S. Naval Research LaboratoryJames Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRLJennifer K. Hite, Naval Research LaboratoryN. Mahadik, U.S. Naval Research LaboratoryRobert Kaplar, Sandia National Labs, Albuquerque, NMO. Aktas, Sandia National Labs, Albuquerque, NM