Nercy Ebrahimi

Skyworks Solution Inc.

  • Plating Showerhead System for Improved Backside Wafer Plating

    Jens Riege, Skyworks Solutions, Inc.
    Heather Knoedler, Skyworks Solutions
    Shiban Tiku, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.

  • A New Method for Creating Sloped Resist Profiles Using Mask Structures

    Jens Riege, Skyworks Solutions, Inc.
    Samuel Mony, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.
  • May 12, 2022 // 3:20pm

    18.8 Solution-Phase Processed Zinc Oxide Vertical Schottky Diode using Flow-limited Field-Injection Electrostatic Spraying

    Samuel Mony, Skyworks Solutions, Inc.
    Jiang Li, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.
    Mohammadsadegh Beheshti, Skyworks Solutions Inc.

    Student Presentation

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  • May 12, 2022 // 3:20pm

    18.9 Optimization in Noble Metal Hard Mask Selectivity in Chlorine-Based Plasma Etch

    Mohammadsadegh Beheshti, Skyworks Solutions Inc.
    Samuel Mony, Skyworks Solutions, Inc.
    Jiang Li, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.
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  • 10.2.2023 Reduction in Scattered Particles Contamination in Inductively Coupled Plasma Etching Systems for High Volume High Yield Production

    Mohammadsadegh Beheshti, Skyworks Solutions Inc.
    Samuel Mony, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.
    Tom Brown, Skyworks Solutions, Inc.

    10.2.2023 – Beheshti Paper

  • 11B.2 – Optimized Resistor Layer Photolithography Scheme with Dose Compensation for High Resistance Uniformity of Reactively Sputtered TaN Thin Film

    Stephanie Y. Chang, Skyworks Solutions, Inc.
    S. Y. Chang, Skyworks Solutions, Inc., Newbury Park, CA
    T. Brown, Skyworks Solutions, Inc., Newbury Park, CA
    Randy Bryie, Skyworks Solutions, Inc.
    R. Lee, Skyworks Solutions, Inc.
    Nercy Ebrahimi, Skyworks Solution Inc.

    11B.2 Final.2025

    Abstract
    Design of experiments (DOE) were performed to optimize resistance uniformity for TaN thin film resistors (TFR) across the Ta target’s life cycle. Fine-tuned photo-lithography recipes with exposure dose compensation (DC) minimized resistance variation introduced during the resistor layer’s (RL) photolithography and deposition processes. Experimental studies revealed how critical dimensions (CD) are influenced by the photoresist’s chemical amplification, substrate’s thermal history during post-exposure bake (PEB), and the coupling time (CT) between process-sensitive steps. The implementation of additional process controls within the RL fabrication process enhanced process capability (Cpk), tightened statistical process control (SPC) of TaN-related electrical parameters, and improved probe yield.