7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2
Niels Posthuma
Imec
-
7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
D. Fahle, AIXTRON SE GermanyC. Mauder, AIXTRON SE, Herzogenrath, GermanyH. Hahn, AIXTRON SEZ. Gao, AIXTRON SE, Herzogenrath, GermanyNiels Posthuma, ImecStefaan Decoutere, Imec, Leuven, Belgium