7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2
Niels Posthuma
Imec
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7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
D. Fahle, AIXTRON SE GermanyC. Mauder, AIXTRON SEH. Hahn, AIXTRON SEZ. Gao, AIXTRON SENiels Posthuma, ImecStefaan Decoutere, Imec, Leuven, Belgium