Robert Harper

Compound Semiconductor Centre, Cardiff, UK
  • May 12, 2022 // 11:30am

    14.3 Dynamic Ron in AlGaN/GaN Structure with Different Layer Thickness

    Hyun-Seop Kim, University of Bristol, Bristol, UK
    Hassan Hirshy, IQE, Cardiff, UK
    Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
    Robert Harper, Compound Semiconductor Centre, Cardiff, UK
    Sam Evans, Nexperia Newport Wafer Fab, Newport, UK
    Martin Kuball, University of Bristol
    Michael J Uren, University of Bristol
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  • 2A.4 – The Effect of Operating Temperature on the On-State Performance of Quasi-Vertical Gallium Nitride MOSFETs

    Jon E. Evans, Centre for Integrative Semiconductor Materials (CISM),
    F. Monaghan, Swansea University, Swansea, UK
    Robert Harper, Compound Semiconductor Centre, Cardiff, UK
    Andrew Withey, Nexperia Newport Wafer Fab, Newport, UK
    C. Colombier, CSconnected, Cardiff
    Matt Elwin, Swansea University
    M. Jennings, Swansea University

    2A.4 Final.2025

    Abstract

    Vertical GaN MOSFETs are a promising technology for next generation efficient power systems. Here we investigate the effect of operating temperature on the on-state performance of quasi-vertical GaN MOSFETs, fabricated on SiC substrates. The threshold voltage, transconductance and on-resistance were extracted from measured characteristics across a range of temperatures. Shifts in both threshold voltage and transconductance are attributed to temperature dependent trapping-detrapping at the MOS interface. These are discussed in relation to series resistance contributions in the channel, drift layer and access resistances at the source and drain contacts.