S. A. Chevtchenko

Ferdinand-Braun-Institut

  • Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs

    S. A. Chevtchenko, Ferdinand-Braun-Institut
    P. Kurpas, Ferdinand-Braun-Institut
    N. Chaturvedi, Ferdinand-Braun-Institut