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S. A. Chevtchenko
Ferdinand-Braun-Institut (FBH)
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Investigation and Reduction of Leakage Current Associated with Gate Encapsulation in by SiNx AlGaN/GaN HFETs
S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)P. Kurpas, Ferdinand-Braun-InstitutN. Chaturvedi, Ferdinand-Braun-Institut -
11.2.1.2024 Defect Reduction and Yield Improvement of MIM Capacitors
S. A. Chevtchenko, Ferdinand-Braun-Institut (FBH)I. Ostermay, Ferdinand-Braun-Institut (FBH)S. Troppenz, Ferdinand-Braun-Institut (FBH)J. Würfl, Ferdinand-Braun-Institut (FBH)O. Hilt, Ferdinand-Braun-Institut (FBH)