The performance and reliability of AlGaN/AlN/GaN HEMT on 4 inch semi-insulating SiC substrate fabricated with baseline GaN HEMT process of Wavice Inc. have been reported. The baseline process of Wavice Inc. includes AlxGa1-xN/AlN/u-GaN/Fe-GaN epi structure with x=22%, Si+ ion implanted and recess etched ohmic, 0.4 um gate length, Ni based gamma Gate, electro plated void free source connected field plate (SCFP), 5 um thick electro plated interconnect metal, 85 um SiC substrate thickness after grinding, through SiC via directly to the source ohmic metal with sloped side wall, 7 um thick electro plated back side metal. To qualify the process technology, 3 non-consecutive lots were produced. DC/RF characterization and a list of reliability tests have been done on randomly selected devices.
-
Qualification of Wavice Baseline GaN HEMT process with 0.4 um gate on 4” SiC wafers
-
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
-
Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
-
May 10, 2022 // 2:50pm
3.3 3.8 GHz 20W Compact 2 stage GaN HEMT Power Amplifier using IPD on HPSI SiC substrate
Download Paper
Loading...
Reload document 
Open in new tab