Sangyeob Kim

Kumoh National Institute of Technology

  • 11.2.5.2024 Characterization of 1.2 kV SiC Trench MOSFETs with Buried p+ Layers Using a Double-Pulse Circuit

    Yeongeun Park, Kumoh National Institute of Technology
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Sangyeob Kim, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Soontak Kwon, KEC, Republic of Korea
    Ogyun Seok, Kumoh National Institute of Technology
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  • 12.0.5.2024 Junction termination extensions using P-type epitaxial growth layers for 3.3 kV SiC PiN diodes

    Sangyeob Kim, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Gyuhyeok Kang, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology
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  • 12.0.6.2024 Improving the Surge Characteristics of SiC MOSFETs by Using Poly-Si SBDs

    Gyuhyeok Kang, Kumoh National Institute of Technology
    Yeongeun Park, Kumoh National Institute of Technology
    Hyowon Yoon, Kumoh National Institute of Technology
    Chaeyun Kim, Kumoh National Institute of Technology
    Sangyeob Kim, Kumoh National Institute of Technology
    Ogyun Seok, Kumoh National Institute of Technology
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