Serge karboyan

University of Bristol
  • May 02, 2019 // 10:30am – 10:50am

    15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model

    Manikant Singh, University of Bristol
    Serge karboyan, University of Bristol
    Hareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UK
    Trevor Martin, IQE Europe, St Mellons, Cardiff, UK
    Download Paper
  • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

    William Waller, University of Bristol
    Mark Gajda, NXP Semiconductors
    Saurabh Pandey, NXP Semiconductors
    Johan Donkers, NXP Semiconductors
    David Calton, NXP Semiconductors
    Jeroen Croon, NXP Semiconductors
    Serge karboyan, University of Bristol
    Michael Uren, University of Bristol
    Martin Kuball, University of Bristol
    Download Paper
  • 5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs

    Manikant Singh, University of Bristol
    Serge karboyan, University of Bristol
    Michael J. Uren
    Kean Boon Lee, University of Sheffield
    Zaffar Zaidi, University of Sheffield
    Peter Houston, University of Sheffield, Sheffield
    Martin Kuball, University of Bristol
    Download Paper
  • 8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs

    Serge karboyan, University of Bristol
    Sara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of Bristol
    James Pomeroy, University of Bristol
    Indranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom
    Michael Uren, University of Bristol
    Peter Moens, ON Semiconductor, Corp. R&D
    Abishek Banerjee, ON Semiconductor, Oudenaarde 9700, Belgium
    Markus Caesar, ON Semiconductor, Oudenaarde 9700, Belgium
    Martin Kuball, University of Bristol
    Download Paper