Loading...
Serge Karboyan
Nexperia. Manchester, UK
-
May 02, 2019 // 10:30am – 10:50am
15.1 Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKHareesh Chandrasekar, Center for Device Thermography and Reliability, University of Bristol, Bristol, UKTrevor Martin, IQE Europe, St Mellons, Cardiff, UK -
18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices
William Waller, University of BristolMark Gajda, NXP SemiconductorsSaurabh Pandey, NXP SemiconductorsJohan Donkers, NXP SemiconductorsDavid Calton, NXP SemiconductorsJeroen Croon, NXP SemiconductorsSerge Karboyan, Nexperia. Manchester, UKMichael Uren, University of BristolMartin Kuball, University of Bristol -
5.2 Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN HEMTs
Manikant Singh, University of BristolSerge Karboyan, Nexperia. Manchester, UKKean Boon Lee, University of SheffieldZaffar Zaidi, University of SheffieldPeter Houston, University of Sheffield, SheffieldMartin Kuball, University of Bristol -
8b.2 Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs
Serge Karboyan, Nexperia. Manchester, UKSara Martin Horcajo, Centre for Device Thermography and Reliability (CDTR), University of BristolJames Pomeroy, University of BristolIndranil Chatterjee, H H Wills Physics Laboratory, University of Bristol, BS8 1TL, United KingdomMichael Uren, University of BristolPeter Moens, ON Semiconductor, Corp. R&DAbishek Banerjee, ON Semiconductor, Oudenaarde 9700, BelgiumMarkus Caesar, ON Semiconductor, Oudenaarde 9700, BelgiumMartin Kuball, University of Bristol -
May 12, 2022 // 2:30pm
17.4 Clip bonded CCPAK-1212: Engineering the next generation GaN products
Serge Karboyan, Nexperia. Manchester, UKAdam Brown, Nexperia. Manchester, UKBas Verheijen, Nexperia. Manchester, UKDownload Paper