Siyu Liu
Xidian University, Xi'an, China
-
May 10, 2022 // 4:50pm
5.3 Normally-off InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate Recess
Siyu Liu, Xidian University, Xi'an, ChinaMa Xiaohua, Xidian University, Xi'an, ChinaJiejie Zhu, Xidian University, Xi'an, ChinaMinhan Mi, Xidian UniversityJingshu Guo, Xidian University, Xi'an, ChinaYue Hao, Xidian University, Xi'an, China -
May 19, 2022 // 2:10pm
17.3 Regrown Ohmic contact of InAlN/GaN HEMTs based on MOCVD
Jingshu Guo, Xidian University, Xi'an, ChinaJiejie Zhu, Xidian University, Xi'an, ChinaSiyu Liu, Xidian University, Xi'an, ChinaJiahao Xu, Xidian University, Xi'an, ChinaX. Zhao, Massachusetts Institute of TechnologyMa Xiaohua, Xidian University, Xi'an, China