Loading...
-
8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Download Paper
Loading...
-
7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications
-
6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform
-
3A.5 – 1000-Hour HTRB Test on 1200 V Lateral HEMTs with Engineered p-GaN Gate
Abstract
Lateral p-GaN gate-based power HEMTs are fabricated using a 9 μm thick GaN buffer on 200 mm GaN-on-QST® engineered substrates with a poly-AlN core, targeting 1200 V applications. The fabricated devices on engineered p-GaN gate on 9 μm thick GaN buffer show good ON/OFF state electrical characteristics and breakdown ~ 1800 V. The reliability of the fabricated p-GaN HEMTs were evaluated by a 1000-hour high temperature reverse bias (HTRB) stress test at 1200 V. No impact of HTRB stress was observed on electrical parameters and the devices yield a high pass rate.
Reload document 
Open in new tab