Stefaan Decoutere

Imec

  • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

    K. Geens, imec,
    H. Hahn, AIXTRON SE
    H. Liang, imec,
    M. Borga, imec
    D. Cingu, imec
    S. You, imec
    M. Marx, AIXTRON SE
    R. Oligschlaeger, AIXTRON SE
    D. Fahle, AIXTRON SE
    M. Heuken, AIXTRON SE
    V. Odnoblyudov, Qromis, inc.
    O. Aktas, Qromis, Inc.
    C. Basceri, Qromis, Inc.
    S. Decoutere, imec
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  • 7.5.2023 Improving the yield for GaN-on-Si HEMT devices for power applications

    D. Fahle, AIXTRON SE Germany
    C. Mauder, AIXTRON SE
    H. Hahn, AIXTRON SE
    Z. Gao, AIXTRON SE
    Niels Posthuma, Imec
    Stefaan Decoutere, Imec, Leuven, Belgium

    7.5.2023_Improving the yield for GaN-on-Si HEMT devices for power applications_extended_v2

  • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

    C. Basceri, Qromis, Inc.
    V. Odnoblyudov, Qromis, inc.
    C. Kurth, Qromis, Inc.
    M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
    S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
    M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
    C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    Karen Geens, imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    H. De Pauw, CMST, imec & Ghent University
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    S. Decoutere, imec
    H. Hahn, AIXTRON SE
    M. Heuken, AIXTRON SE
    K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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