Ulli Hansen

MSG Lithoglas GmbH
  • Wafer Level Packaging for Electronic RF Systems Using GaN Technologies

    Ulli Hansen, MSG Lithoglas GmbH
    Hermann Stieglauer, United Monolithic Semiconductors GmbH
    Klaus Riepe, United Monolithic Semiconductorss GmBH
    Janina Moereke, United Monolithic Semiconductorss GmBH

    The main objective of the Covered Gallium Nitride (CoGaN) project is the demonstration of the electrical performance of a GaN HPA in a frequency range between 25 GHz and 40 GHz with a maximal output power of 5 W in a chip scale packaging technology for 5G applications. In addition, requirements are existing for reliability testing at THB condition of 85°C/85% rel. humidity. In this work a test vehicle circuit with a pre matched 1 mm transistor is used for showing the process feasibility.

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  • 3.2.2021 Wafer-Level Packages for RF GaN Technologies & On-Wafer Humidity Test

    Hermann Stieglauer, United Monolithic Semiconductors Germany
    Klaus Riepe, United Monolithic Semiconductorss GmBH
    Janina Moereke, United Monolithic Semiconductorss GmBH
    Jan Grünenpütt, United Monolithic Semiconductors France
    Hervé Blanck, United Monolithic Semiconductors
    Daniel Sommer, United Monolithic Semiconductorss GmBH
    Benoît Lambert, United Monolithic Semiconductors Germany
    Jerome Van de Casteele, United Monolithic Semiconductorss SAS
    Mehdy Neffati, United Monolithic Semiconductorss SAS
    Ulli Hansen, MSG Lithoglas GmbH
    Simon Maus, MSG Lithoglas GmbH
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