Umesh Mishra

Transphorm

  • Manufacturing of N-polar GaN on Sapphire Epitaxial Wafers for Millimeter-wave Electronics Applications

    Umesh Mishra, Transphorm
    Xiang Liu, Transphorm Inc.
    Ron Birkhahn, Transphorm Inc.
    Stacia Keller, Transphorm Inc.
    Brian Swenson, Transphorm Inc.
    Lee McCarthy, Transphorm Inc.
    Davide Bisi, Transphorm Inc.

    Transphorm is supplying N-polar GaN on SiC and sapphire epitaxial wafers for customers developing ultra-high performance RF and mm-wave electronics devices. The manufacturing process is SPC controlled and DOE optimized, and the wafers exhibit very high 2DEG electron mobility and excellent thickness and Rsh uniformities.

    Download Paper

  • 1.3 Looking for reliability and high performance in RF and power conversion applications? Use GaN.

    Umesh Mishra, Transphorm
    Download Paper

  • 2.3.2021 Commercial N-polar GaN on SiC HEMT Epitaxial Wafers Manufactured by MOCVD for 5G mm-Wave Applications

    Xiang Liu, Transphorm Inc.,
    Brian Romanczyk, Transphorm Inc.
    Stacia Keller, Transphorm Inc.
    Brian Swenson, Transphorm Inc.
    Ron Birkhahn, Transphorm Inc.
    Geetak Gupta, Transphorm Inc.
    Davide Bisi, Transphorm Inc.
    Umesh Mishra, Transphorm
    Lee McCarthy, Transphorm Inc.

    [embeddoc url=”http://csmantech.org/wp-content/uploads/Digest/Digests-2021/2.3.2021-Liu-Transphorm-2021-CS-Mantech.pdf” download=”all” viewer=”google”]

    Download Paper