Vladimir Odnoblyudov

Qromis, Inc.

  • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

    Ming Chin Chen, Unikorn Semiconductor Corporation
    Chia Cheng Liu, Unikorn Semiconductor Corporation
    Vladimir Odnoblyudov, Qromis, Inc.
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  • 6.1.1.2024 (Invited)Taking GaN to the Next Level of 100 V to 2000 V and Beyond Scalability with the Revolutionary 200 mm and 300 mm QST® Manufacturing Platform

    C. Basceri, Qromis, Inc.
    V. Odnoblyudov, Qromis, inc.
    C. Kurth, Qromis, Inc.
    M. Yamada, SHIN-ETSU CHEMICAL Co., Ltd
    S. Konishi, SHIN-ETSU CHEMICAL Co., Ltd
    M. Kawahara, SHIN-ETSU CHEMICAL Co., Ltd
    C.-C Liao, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    S. Shen, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    J. Chiu, VANGUARD INTERNATIONAL SEMICONDUCTOR Corp
    Karen Geens, imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    H. De Pauw, CMST, imec & Ghent University
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    S. Decoutere, imec
    H. Hahn, AIXTRON SE
    M. Heuken, AIXTRON SE
    K. Tanigawa, OKI ELECTRIC INDUSTRY Co., Ltd
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  • 8.1.3.2024 High Temperature Operation of GaN High Electron Mobility Transistors on Large-Area Engineered Substrates for Extreme Environments

    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    Michael E. Liao, National Research Council Postdoctoral Fellow, Residing at NRL
    Joseph Spencer, U.S. Naval Research Laboratory
    Geoffrey M. Foster, U.S. Naval Research Laboratory
    Andrew Koehler, U. S. Naval Research Laboratory
    Vladimir Odnoblyudov, Qromis, Inc.
    Marko J. Tadjer, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
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