Invited Presentation
Walter Wohlmuth
Vanguard International Semiconductor Corporation, Taiwan
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3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications
Yi-Wei Lien, WIN Semiconductors CorpWayne Lin, WIN Semiconductors CorpJhih-Han Du, WIN Semiconductors CorpRichard Jhan, WIN Semiconductors CorpAndy Tseng, WIN Semiconductors CorpWei-Chou Wang, WIN Semiconductors CorpClement Huang, WIN Semiconductors CorpShinichiro Takatani, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan -
14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias
Chia-Hao Chen, WIN Semiconductors CorpYu-Wei Chang, WIN Semiconductors CorpShih-Hui Huang, WIN Semiconductors CorpFraser Wang, WIN Semiconductors CorpBenny Ho, WIN Semiconductors CorpWalter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan -
March 10, 2022 // 8:45am
13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform
Cem Basceri, QROMIS, USAVlad Odnoblyudov, QROMIS, USAO. Aktas, Sandia National Labs, Albuquerque, NMWalter Wohlmuth, Vanguard International Semiconductor Corporation, TaiwanKaren Geens, imec, Leuven, BelgiumBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumH. Hahn, AIXTRON SE, Herzogenrath, GermanyD. Fahle, AIXTRON SE GermanyStefaan Decoutere, Imec, Leuven, BelgiumA. Vohra, imec, Leuven, BelgiumM. Heuken, AIXTRON SE GermanyDownload PaperLoading...