Walter Wohlmuth

Vanguard International Semiconductor Corporation, Taiwan

  • 3.4 An Improved 0.25µm GaN on SiC MMIC Technology for Radar and 5G Applications

    Yi-Wei Lien, WIN Semiconductors Corp
    Wayne Lin, WIN Semiconductors Corp
    Jhih-Han Du, WIN Semiconductors Corp
    Richard Jhan, WIN Semiconductors Corp
    Andy Tseng, WIN Semiconductors Corp
    Wei-Chou Wang, WIN Semiconductors Corp
    Clement Huang, WIN Semiconductors Corp
    Shinichiro Takatani, WIN Semiconductors Corp
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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  • 14.12 Enhancing the Manufacturability and Evolving the Technology of GaN on SiC Back-Side Vias

    Chia-Hao Chen, WIN Semiconductors Corp
    Yu-Wei Chang, WIN Semiconductors Corp
    Shih-Hui Huang, WIN Semiconductors Corp
    Fraser Wang, WIN Semiconductors Corp
    Benny Ho, WIN Semiconductors Corp
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
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  • March 10, 2022 // 8:45am

    13.2 Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

    Cem Basceri, QROMIS, USA
    Vlad Odnoblyudov, QROMIS, USA
    O. Aktas, Sandia National Labs, Albuquerque, NM
    Walter Wohlmuth, Vanguard International Semiconductor Corporation, Taiwan
    Karen Geens, imec, Leuven, Belgium
    Benoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, Belgium
    H. Hahn, AIXTRON SE, Herzogenrath, Germany
    D. Fahle, AIXTRON SE Germany
    Stefaan Decoutere, Imec, Leuven, Belgium
    A. Vohra, imec, Leuven, Belgium
    M. Heuken, AIXTRON SE Germany

    Invited Presentation

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