Y. Minoura

Fujitsu Limited and Fujitsu Laboratories Ltd

  • 6.1.2021 GaN Through-substrate Via Process for GaN-on-GaN HEMT Power Amplifiers

    N. Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
    A. Takahashi, Fujitsu Limited and Fujitsu Laboratories Ltd
    Y. Minoura, Fujitsu Limited and Fujitsu Laboratories Ltd
    Y. Kumazaki, Fujitsu Limited and Fujitsu Laboratories Ltd
    S. Ozaki, Fujitsu Limited and Fujitsu Laboratories Ltd
    J. Kotani, Fujitsu Limited and Fujitsu Laboratories Ltd
    T. Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd
    N. Kurahash, Fujitsu Limited
    M. Sato, Fujitsu Limited
    N. Hara, Fujitsu Limited and Fujitsu Laboratories Ltd
    K. Watanabe, Fujitsu Limited and Fujitsu Laboratories Ltd
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  • 4A.1 – X-band InAlGaN/GaN HEMT with High-Power and High-Reliability

    Atsushi Yamada, Fujitsu Limited and Fujitsu Laboratories Ltd.
    Yoichi Kamada, Fujitsu Laboratories
    Yuichi Minoura, Fujitsu Laboratories Ltd.
    Toshihiro Ohki, Fujitsu Limited and Fujitsu Laboratories Ltd.
    M. Sato, Fujitsu Limited

    4A.1 Final.2025

    Abstract
    We developed high-power and high-reliability quaternary InAlGaN/GaN HEMTs via TCVD SiNx passivation. This passivation technique achieves lower sheet resistance and higher-voltage operation for an InAlGaN/GaN HEMT compared with PECVD SiNx passivation. Moreover, it yields a record-high output power density of 31.0 W/mm in the X-band. Furthermore, we demonstrated that the InAlGaN/GaN HEMT with TCVD SiNx passivation is highly reliable.