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  • 11: Characterization

    • 11.1 Monitoring the Transient Thermal Response of AlGaN/GaN HEMTs using Transient Thermoreflectance Imaging

      Georges Pavlidis, Georgia Institute of Technology
      Samuel Graham, Georgia Institute of Technology
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    • 11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach

      Marshall Wilson, Semilab SDI, Tampa, FL,
      A. Savtchouk, Semilab SDI
      Dmitriy Marinskiy, Semilab SDI, Tampa, FL,
      J. Lagowski, Semilab SDI
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    • 11.3 Ec-0.90 eV Trap-Induced Threshold Voltage Instability in GaN/Si MISHEMTs

      Wenyuan Sun, the Ohio State University
      Steven Ringel, Ohio State University
      Aaron Arehart, the Ohio State University
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    • 11.4 Metrology for In-situ Monitoring of Roughness for Diffusers for Light Emitting Devices Manufacturing

      Wojtek Walecki, Frontier Semiconductor
      Peter Walecki, SOLLC
      Eve Walecki, SOLLC
      Abigail Walecki, SOLLC
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