Abstracts are due October 31, 2021
  • Abe, Yukio

    Sciocs Company Limited
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Aktas, Ozgur

    Qromis, Inc.
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Alexandrova, Maria

    ETH-Zurich
    • 20.11 Comparison of Ion-Milling and Ion-Sputtering to Remove Edge Roughness of EBL Defined Emitter Metallization in InP/GaAsSb DHBTs

      Wei Quan, ETH-Zurich
      Ralf Flueckiger, ETH-Zurich
      Maria Alexandrova, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Allen, Scott

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Anaya, Julian

    Anaya Scientific Consultancy
    • 20.10 Overcoming High Power Limitation of Thin Film Resistors at GHz Frequencies Using CVD Diamond Substrates

      Julian Anaya, Anaya Scientific Consultancy
      Thomas Obeloer, Element Six
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Anderson, Travis

    Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
    • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Arehart, Aaron

    the Ohio State University
    • 11.3 Ec-0.90 eV Trap-Induced Threshold Voltage Instability in GaN/Si MISHEMTs

      Wenyuan Sun, the Ohio State University
      Steven Ringel, the Ohio State University
      Aaron Arehart, the Ohio State University
      Download Paper
  • Arif, Ronald

    Veeco Instruments Inc.
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Asubar, Joel

    University of Fukui
    • 4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation

      Atsuya Suzuki, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Baele, Joris

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • Bahl, Sandeep

    Texas Instruments, Inc.
    • 2.2 Leveraging Power Electronics Acumen to Accelerate the Adoption Ramp of Gallium Nitride

      Steve Tom, Texas Instruments, Inc.
      Sandeep Bahl, Texas Instruments, Inc.
      Masoud Beheshti, Texas Instruments, Inc.
      Paul Brohlin, Texas Instruments, Inc.
      Stephanie Butler, Texas Instruments, Inc.
      David Zinn, Texas Instruments, Inc.
      Download Paper
  • Bahng, Wook

    Korea Electrotechnology Research Institute
    • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

      Dong Young Kim, Gyeongsang National University
      Ogyun Seok, Korea Electrotechnology Research Institute
      Himchan Park, Korea Electrotechnology Research Institute
      Wook Bahng, Korea Electrotechnology Research Institute
      Hyoung Woo Kim, Korea Electrotechnology Research Institute
      Ki Cheol Park, Gyeongsang National University
      Download Paper
  • Bai, Tingyu

    University of California, Los Angeles
    • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

      Luke Yates, Georgia Institute of Technology
      Chien-Fong Lo, IQE
      Tingyu Bai, University of California, Los Angeles
      Mark Goorsky, University of California, Los Angeles
      Wayne Johnson, IQE
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Baldini, Michele

    Leibniz-Institut für Kristallzüchtung
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Balkas, Elif

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Barker, Anthony

    SPTS Technologies Ltd.
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Barnes, Frank

    Qorvo Inc.
    • 17.1 RF DS Yield Improvement through ZONAL Technique for pHEMT Product

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Frank Barnes, Qorvo Inc.
      Andrew Choo, UP! Strategies Consulting
      Download Paper
  • Basceri, Cem

    QROMIS, Inc.
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Bayram, Can

    University of Illinois Urbana Champaign
    • 15.4 Cubic Phase GaN Integrated on CMOS-Compatible Silicon (100)

      Richard Liu, University of Illinois at Urbana Champaign
      Can Bayram, University of Illinois Urbana Champaign
      Download Paper
    • 16.2 Scaling AlGaN/GaN High Electron Mobility Transistor Structures onto 200-mm Silicon (111) Substrates through Novel Buffer Layer Configurations

      Hsuan-Ping Lee, University of Illinois Urbana Champaign
      Josh Perozek, University of Illinois Urbana Champaign
      Can Bayram, University of Illinois Urbana Champaign
      Download Paper
  • Beam, Ed

    Qorvo
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • Beckers, Arthur

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Beekmann, Knut

    IDEX Sealing Solutions – Precision Polymer Engineering Ltd
    • 20.6 Improving Process Tool Productivity by Correct Sealing Material Selection for Plasma Processes

      Murat Gulcur, IDEX Sealing Solutions – Precision Polymer Engineering Ltd
      Knut Beekmann, IDEX Sealing Solutions – Precision Polymer Engineering Ltd
      Download Paper
  • Beheshti, Masoud

    Texas Instruments, Inc.
    • 2.2 Leveraging Power Electronics Acumen to Accelerate the Adoption Ramp of Gallium Nitride

      Steve Tom, Texas Instruments, Inc.
      Sandeep Bahl, Texas Instruments, Inc.
      Masoud Beheshti, Texas Instruments, Inc.
      Paul Brohlin, Texas Instruments, Inc.
      Stephanie Butler, Texas Instruments, Inc.
      David Zinn, Texas Instruments, Inc.
      Download Paper
  • Behmenburg, Hannes

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Besong, Val

    Qorvo, Inc.
    • 17.5 Chemical Attack of a pHEMT Channel Due to Poor Passivation Coverage

      Robert Waco, Qorvo Inc.
      Corey Nevers, Qorvo, Inc
      Val Besong, Qorvo, Inc.
      Download Paper
  • Blevins, John

    Air Force Research Laboratory
    • 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material

      John Blevins, Air Force Research Laboratory
      Darren Thomson, Air Force Research Laboratory
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Greg Foundos, Northrop Grumman SYNOPTICS
      Download Paper
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Bolognesi, Colombo

    ETH-Zurich
    • 5.1 Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance

      Tamara Saranovac, ETH-Zurich
      Olivier Ostinelli, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
    • 10.1 Comparison of Charge Dissipation Layers and Dose Sensitivity of PMMA Electron Beam Lithography on Transparent Insulating Substrates such as GaN

      Anna Hambitzer, ETH-Zurich
      A. Olziersky, IBM-Research Zurich
      Tamara Saranovac, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
    • 20.11 Comparison of Ion-Milling and Ion-Sputtering to Remove Edge Roughness of EBL Defined Emitter Metallization in InP/GaAsSb DHBTs

      Wei Quan, ETH-Zurich
      Ralf Flueckiger, ETH-Zurich
      Maria Alexandrova, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Bowen, Ross

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Breaux, Louis

    Qorvo
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Brohlin, Paul

    Texas Instruments, Inc.
    • 2.2 Leveraging Power Electronics Acumen to Accelerate the Adoption Ramp of Gallium Nitride

      Steve Tom, Texas Instruments, Inc.
      Sandeep Bahl, Texas Instruments, Inc.
      Masoud Beheshti, Texas Instruments, Inc.
      Paul Brohlin, Texas Instruments, Inc.
      Stephanie Butler, Texas Instruments, Inc.
      David Zinn, Texas Instruments, Inc.
      Download Paper
  • Brown, David

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Bubber, Randhir

    Veeco Instruments
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Burger, Jeff

    Integra Technologies, Inc.
    • 5.5 First Demonstration of a GaN-SiC RF Technology Operating Above 100 V in S-band

      Gabriele Formicone, Integra Technologies, Inc.
      James Custer, IntegraTechnologies, Inc.
      Jeff Burger, Integra Technologies, Inc.
      Download Paper
  • Burk, Al

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Burnham, Shawn

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Butler, Stephanie

    Texas Instruments, Inc.
    • 2.2 Leveraging Power Electronics Acumen to Accelerate the Adoption Ramp of Gallium Nitride

      Steve Tom, Texas Instruments, Inc.
      Sandeep Bahl, Texas Instruments, Inc.
      Masoud Beheshti, Texas Instruments, Inc.
      Paul Brohlin, Texas Instruments, Inc.
      Stephanie Butler, Texas Instruments, Inc.
      David Zinn, Texas Instruments, Inc.
      Download Paper
  • Cadieux, Catherine

    Univ. Grenoble Alpes
    • 5.4 InP Based Engineered Substrates for Photonics and RF Applications

      Eric Guiot, SOITEC
      Alexis Drouin, SOITEC S.A.
      Olivier Ledoux, SOITEC S.A.
      Muriel Martinez, SOITEC S.A.
      Catherine Cadieux, Univ. Grenoble Alpes
      Download Paper
  • Calton, David

    NXP Semiconductors
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Carlson, Eric

    Virginia Tech
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • Carter, James

    MACOM
    • 19.1 Manufacturing of 10 GHz InGaAs/InP p-i-n Photodetectors in GaAs Wafer Fabrication Facility

      Debdas Pal, MACOM
      Lisza Elliot, MACOM
      James Carter, MACOM
      Download Paper
  • Celii, Francis

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Chabak, Kelson

    Air Force Research Laboratory
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Chang, Chi-Hsiang

    National Taiwan University
    • 19.4 406 MHz Modulation Bandwidth of GaN-Based Light-Emitting Diodes with Improved Transparent  p-Contact Design

      Hao-Yu Lan, National Taiwan University
      Ying-Yung Lin, National Taiwan University
      Chi-Hsiang Chang, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Chang, Hudong

    Institute of Microelectronics, Chinese Academy of Sciences
    • 5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

      Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences
      Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences
      Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences
      Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences
      Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Chang, Li-Cheng

    National Taiwan University
    • 4.5 Performance Improvement using Diluted KOH Passivation on Recessed-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors Grown on 8-inch Silicon(111) Substrates

      Yi-Hong Jiang, National Taiwan University
      Li-Cheng Chang, National Taiwan University
      Kai-Chieh Hsu, National Taiwan University
      I-Chen Tseng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Chang, Sung-Jae

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Chang, T.-H.

    HetInTec Corp.
    • 15.1 Advancing Technology with Heterogeneous Integration

      Daniel Green, DARPA/MTO
      J. Demmin, Booz Allen Hamilton
      T.-H. Chang, HetInTec Corp.
      Download Paper
  • Chang, Yi-Sheng

    Chang Gung University
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
      Download Paper
  • Chansky, Michael

    Veeco Instruments Inc.
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Chen, Kevin

    The Hong Kong University of Science and Technology
    • 18.4 TDDB and PBTI Characterizations of Fully-Recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Chen, Minkar

    Global Communications Seminconductor, LLC
    • 12.3 NiCr Sheet Resistance Adjustment During Wafer Fabrication Process

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Alex Vigo, Global Communications Seminconductor, LLC
      Download Paper
  • Chen, Shuoqi

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Chen, Wanjun

    University of Electronic Science and Technology of China
    • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

      Jinhan Zhang, University of Electronic Science and Technology of China
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
      Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Yijun Shi, University of Electronic Science and Technology of China
      Qi Zhou, University of Electronic Science and Technology of China
      Wanjun Chen, University of Electronic Science and Technology of China
      Bo Zhang, University of Electronic Science and Technology of China
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Chen, Wenxin

    Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Chen, Yuying

    Hong Kong University of Science and Technology
    • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Yuying Chen, Hong Kong University of Science and Technology
      Chak Wah Tang, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
  • Cheng, Jianpeng

    Peking University
    • 8.4 Good Repeatability of AlGaN/GaN HEMT on 4” Si Substrate by 5×4” Multi-Wafer Production MOCVD System

      Panfeng Ji, Peking University
      Yuxia Feng, Peking University
      Jianpeng Cheng, Peking University
      Chunyan Song, Peking University
      Xuelin Yang, Peking University
      Bo Shen, Peking University
      Download Paper
  • Cheng, Kai

    Enkris Semiconductor, Inc.
    • 20.8 Thick (6 μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices

      Liyang Zhang, Enkris Semiconductor, Inc.
      Peng Xiang, Enkris Semiconductor, Inc.
      Kai Liu, Enkris Semiconductor, Inc.
      Hongjing Huo, Enkris Semiconductor, Inc.
      Hao Ding, Enkris Semiconductor, Inc.
      Ni Yin, Enkris Semiconductor, Inc.
      Kai Cheng, Enkris Semiconductor, Inc.
      Download Paper
  • Cheol Park, Ki

    Gyeongsang National University
    • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

      Dong Young Kim, Gyeongsang National University
      Ogyun Seok, Korea Electrotechnology Research Institute
      Himchan Park, Korea Electrotechnology Research Institute
      Wook Bahng, Korea Electrotechnology Research Institute
      Hyoung Woo Kim, Korea Electrotechnology Research Institute
      Ki Cheol Park, Gyeongsang National University
      Download Paper
  • Cheon Kim, Hae

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Chevtchenko, Sergey

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Chiang, Tsu-Wu

    Plasma-Therm, LLC
    • 13.4 Plasma Dicing on Tape for GaAs Based Devices

      Marco Notarianni, Plasma-Therm LLC
      Tsu-Wu Chiang, Plasma-Therm, LLC
      Christopher Johnson, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC
      Thierry Lazerand, Plasma-Therm, LLC
      Download Paper
  • Chiavetta, Joseph

    Broadcom
    • 12.1 Reduction of Metal Defect Formation through Process Optimization

      Sarah Mason, Broadcom
      Tim Valade, Broadcom
      Joseph Chiavetta, Broadcom
      Dan Edwards, Broadcom
      Download Paper
  • Chiu, Hsien-Chin

    Chang Gung University
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
      Download Paper
  • Choo, Andrew

    UP! Strategies Consulting
    • 17.1 RF DS Yield Improvement through ZONAL Technique for pHEMT Product

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Frank Barnes, Qorvo Inc.
      Andrew Choo, UP! Strategies Consulting
      Download Paper
  • Chou, Tso-Min

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Choudhury, Debabani

    Intel Labs
    • 1.4 Technology Candidates for Next Generation 5G Wireless Communication

      Debabani Choudhury, Intel Labs
      Download Paper
  • Christou, Aris

    University of Maryland-College Park
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Chuang, Bing-Han

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors

      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.
      Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.
      Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.
      Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.
      Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper
  • Clarke, Elda

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Colorado, Michelle

    Qorvo, Inc.
    • 17.2 Optical Defect Investigation and Drill Down Automation

      Darrell Lupo, Qorvo, Inc
      Eric McCormick, Qorvo, Inc.
      Michelle Colorado, Qorvo, Inc.
      Mike McClure
      Craig Hall, Qorvo
      Download Paper
  • Constant, Aurore

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • Coppens, Peter

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • Crespo, Antonio

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Croon, Jeroen

    NXP Semiconductors
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Cui, Yongjie

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Custer, James

    IntegraTechnologies, Inc.
    • 5.5 First Demonstration of a GaN-SiC RF Technology Operating Above 100 V in S-band

      Gabriele Formicone, Integra Technologies, Inc.
      James Custer, IntegraTechnologies, Inc.
      Jeff Burger, Integra Technologies, Inc.
      Download Paper
  • De Pestel, Freddy

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • del Alamo, J.

    Massachusetts Institute of Technology
    • 3.2 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

      A Vardi, Massachusetts Institute of Technology
      J. Lin, Massachusetts Institute of Technology
      W. Lu, Massachusetts Institute of Technology
      X. Zhao, Massachusetts Institute of Technology
      J. del Alamo, Massachusetts Institute of Technology
      Download Paper
  • Demmin, J.

    Booz Allen Hamilton
    • 15.1 Advancing Technology with Heterogeneous Integration

      Daniel Green, DARPA/MTO
      J. Demmin, Booz Allen Hamilton
      T.-H. Chang, HetInTec Corp.
      Download Paper
  • Deshpande, Mandar

    Veeco Instruments Inc.
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Ding, Hao

    Enkris Semiconductor, Inc.
    • 20.8 Thick (6 μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices

      Liyang Zhang, Enkris Semiconductor, Inc.
      Peng Xiang, Enkris Semiconductor, Inc.
      Kai Liu, Enkris Semiconductor, Inc.
      Hongjing Huo, Enkris Semiconductor, Inc.
      Hao Ding, Enkris Semiconductor, Inc.
      Ni Yin, Enkris Semiconductor, Inc.
      Kai Cheng, Enkris Semiconductor, Inc.
      Download Paper
  • Do, Jae-Won

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Donkers, Johan

    NXP Semiconductors
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Downey, Brian

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Drouin, Alexis

    SOITEC S.A.
    • 5.4 InP Based Engineered Substrates for Photonics and RF Applications

      Eric Guiot, SOITEC
      Alexis Drouin, SOITEC S.A.
      Olivier Ledoux, SOITEC S.A.
      Muriel Martinez, SOITEC S.A.
      Catherine Cadieux, Univ. Grenoble Alpes
      Download Paper
  • E. Bowers, J.

    University of California Santa Barbara
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Eddy, Charles

    US Naval Research Laboratory
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Edwards, Dan

    Broadcom
    • 12.1 Reduction of Metal Defect Formation through Process Optimization

      Sarah Mason, Broadcom
      Tim Valade, Broadcom
      Joseph Chiavetta, Broadcom
      Dan Edwards, Broadcom
      Download Paper
  • Elliot, Lisza

    MACOM
    • 19.1 Manufacturing of 10 GHz InGaAs/InP p-i-n Photodetectors in GaAs Wafer Fabrication Facility

      Debdas Pal, MACOM
      Lisza Elliot, MACOM
      James Carter, MACOM
      Download Paper
  • Eng Kian Lee, Kenneth

    Singapore-MIT Alliance for Research and Technology
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Evans, Keith

    Kyma Technologies, Inc.
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Faili, Firooz

    Element Six Technologies
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
  • Fan, Wei

    Momentive Performance Materials Inc
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Fang, Yutao

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors

      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.
      Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.
      Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.
      Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.
      Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper
  • Faria, Mario

    The MAX Group
    • 7.1 Rapidly Scaling Production Given Shorter Business Cycles for CS Manufacturers

      Mario Faria, The MAX Group
      ILIA KAPLAN, The MAX Group
      Mike Welch, The MAX Group
      Ariel Meyuhas, The MAX Group
      Download Paper
  • Fatt Yoon, Soon

    Nanyang Technological University
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Fay, Patrick

    Notre Dame
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • Feng, Milton

    University of Illinois Urbana-Champaign
    • 19.2 Design and Fabrication of High-Speed PIN Photodiodes for 50 Gb/s Optical Fiber Links

      Ardy Winoto, University of Illinois at Urbana Champaign
      Yu-Ting Peng, University of Illinois at Urbana Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
    • 19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification

      Junyi Qiu, University of Illinois at Urbana-Champaign
      Hsiao-Lun Wang, University of Illinois at Urbana-Champaign
      Curtis Wang, University of Illinois at Urbana-Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Feng, Yuxia

    Peking University
    • 8.4 Good Repeatability of AlGaN/GaN HEMT on 4” Si Substrate by 5×4” Multi-Wafer Production MOCVD System

      Panfeng Ji, Peking University
      Yuxia Feng, Peking University
      Jianpeng Cheng, Peking University
      Chunyan Song, Peking University
      Xuelin Yang, Peking University
      Bo Shen, Peking University
      Download Paper
  • Feron, Olivier

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Fitch, Robert

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Fitzgerald, Eugene

    Massachusetts Institute of Technology
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Flueckiger, Ralf

    ETH-Zurich
    • 20.11 Comparison of Ion-Milling and Ion-Sputtering to Remove Edge Roughness of EBL Defined Emitter Metallization in InP/GaAsSb DHBTs

      Wei Quan, ETH-Zurich
      Ralf Flueckiger, ETH-Zurich
      Maria Alexandrova, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Formicone, Gabriele

    Integra Technologies, Inc.
    • 5.5 First Demonstration of a GaN-SiC RF Technology Operating Above 100 V in S-band

      Gabriele Formicone, Integra Technologies, Inc.
      James Custer, IntegraTechnologies, Inc.
      Jeff Burger, Integra Technologies, Inc.
      Download Paper
  • Foundos, Greg

    Northrop Grumman SYNOPTICS
    • 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material

      John Blevins, Air Force Research Laboratory
      Darren Thomson, Air Force Research Laboratory
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Greg Foundos, Northrop Grumman SYNOPTICS
      Download Paper
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Francis, Daniel

    Element Six Technologies
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
  • Gajda, Mark

    NXP Semiconductors
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Gibbon, John

    Qorvo
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Gong, Xiao

    National University of Singapore
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Gonzalez, David

    Qorvo, Inc.
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Goorsky, Mark

    University of California, Los Angeles
    • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

      Luke Yates, Georgia Institute of Technology
      Chien-Fong Lo, IQE
      Tingyu Bai, University of California, Los Angeles
      Mark Goorsky, University of California, Los Angeles
      Wayne Johnson, IQE
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Gossard, A.

    University of California Santa Barbara
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Grabar, Robert

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Graham, Samuel

    Georgia Institute of Technology
    • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

      Luke Yates, Georgia Institute of Technology
      Chien-Fong Lo, IQE
      Tingyu Bai, University of California, Los Angeles
      Mark Goorsky, University of California, Los Angeles
      Wayne Johnson, IQE
      Samuel Graham, Georgia Institute of Technology
      Download Paper
    • 11.1 Monitoring the Transient Thermal Response of AlGaN/GaN HEMTs using Transient Thermoreflectance Imaging

      Georges Pavlidis, Georgia Institute of Technology
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Green, Andrew

    Air Force Research Laboratory
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Green, Daniel

    DARPA/MTO
    • 15.1 Advancing Technology with Heterogeneous Integration

      Daniel Green, DARPA/MTO
      J. Demmin, Booz Allen Hamilton
      T.-H. Chang, HetInTec Corp.
      Download Paper
  • Gue Min, Byong

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Guido, Lou

    Virginia Tech
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • Guiot, Eric

    SOITEC
    • 5.4 InP Based Engineered Substrates for Photonics and RF Applications

      Eric Guiot, SOITEC
      Alexis Drouin, SOITEC S.A.
      Olivier Ledoux, SOITEC S.A.
      Muriel Martinez, SOITEC S.A.
      Catherine Cadieux, Univ. Grenoble Alpes
      Download Paper
  • Gulcur, Murat

    IDEX Sealing Solutions – Precision Polymer Engineering Ltd
    • 20.6 Improving Process Tool Productivity by Correct Sealing Material Selection for Plasma Processes

      Murat Gulcur, IDEX Sealing Solutions – Precision Polymer Engineering Ltd
      Knut Beekmann, IDEX Sealing Solutions – Precision Polymer Engineering Ltd
      Download Paper
  • Gupta, Gaurav

    Qorvo
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Hagi, Y.

    Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Hakone, Yoshihiro

    Nippon Kayaku Co., Ltd.
    • 10.3 Design Rule Study of Transfer Molding Process on Polymer Cavity Packages

      Nao Honda, Nippon Kayaku Co., Ltd.
      Yoshihiro Hakone, Nippon Kayaku Co., Ltd.
      Yoshiyuki Ono, Nippon Kayaku Co., Ltd.
      Michael Quillen, MicroChem Corp.
      Hochoong Lee, Teikoku Taping System, Inc.
      Download Paper
  • Hall, Craig

    Qorvo
    • 17.2 Optical Defect Investigation and Drill Down Automation

      Darrell Lupo, Qorvo, Inc
      Eric McCormick, Qorvo, Inc.
      Michelle Colorado, Qorvo, Inc.
      Mike McClure
      Craig Hall, Qorvo
      Download Paper
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Hambitzer, Anna

    ETH-Zurich
    • 10.1 Comparison of Charge Dissipation Layers and Dose Sensitivity of PMMA Electron Beam Lithography on Transparent Insulating Substrates such as GaN

      Anna Hambitzer, ETH-Zurich
      A. Olziersky, IBM-Research Zurich
      Tamara Saranovac, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Hamilton, Pat

    Qorvo Inc.
    • 17.1 RF DS Yield Improvement through ZONAL Technique for pHEMT Product

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Frank Barnes, Qorvo Inc.
      Andrew Choo, UP! Strategies Consulting
      Download Paper
  • Hanson, Allen

    MACOM Technology Solutions Inc.
    • 9.4 Statistical Analysis of Lifetimes of MIM Capacitors with Monte Carlo Simulation

      Mingda Zhu, Cornell University
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Huili Xing, Cornell University
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Hardy, Matthew

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Heller, Eric

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Heuken, Michael

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Higham, Eric

    Strategy Analytics
    • 5G.1 Is 5G the Next RF Compound Semiconductor Industry Driver?

      Eric Higham, Strategy Analytics
      Download Paper
  • Hite, Jennifer

    U.S. Naval Research Laboratory
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Hitt, John

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Ho, Shin-Yi

    National Taiwan University
    • 4.2 Study of Current Collapse in Single (AlGaN/GaN) and Double (AlGaN/GaN/AlGaN) Heterostruture Enhancement Mode HEMTs

      Chun-Hsun Lee, National Taiwan University
      Shin-Yi Ho, National Taiwan University
      Jin-Xiang Zhang, Neoton Optoelectronics, Inc.
      Huang-Kai Lin, Neoton Optoelectronics, Inc.
      Jian-Jang Huang, National Taiwan University
      Download Paper
  • Ho, Tom

    BISTel, Inc.
    • 20.2 A Novel Approach to Fault Detection Using Full Sensor Trace Analytic

      Tom Ho, BISTel, Inc.
      Justin Wong, BISTel, Inc.
      Download Paper
  • Hobart, Karl

    Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
    • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Honda, Nao

    Nippon Kayaku Co., Ltd.
    • 10.3 Design Rule Study of Transfer Molding Process on Polymer Cavity Packages

      Nao Honda, Nippon Kayaku Co., Ltd.
      Yoshihiro Hakone, Nippon Kayaku Co., Ltd.
      Yoshiyuki Ono, Nippon Kayaku Co., Ltd.
      Michael Quillen, MicroChem Corp.
      Hochoong Lee, Teikoku Taping System, Inc.
      Download Paper
  • Hong Lee, Kwang

    Singapore-MIT Alliance for Research and Technology
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Horikiri, Fumimasa

    Sciocs Company Limited
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Horsley, Gordon

    SPTS Technologies Ltd.
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Hsu, Kai-Chieh

    National Taiwan University
    • 4.5 Performance Improvement using Diluted KOH Passivation on Recessed-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors Grown on 8-inch Silicon(111) Substrates

      Yi-Hong Jiang, National Taiwan University
      Li-Cheng Chang, National Taiwan University
      Kai-Chieh Hsu, National Taiwan University
      I-Chen Tseng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Hu, Chih-Wei

    Technology Development Division, Episil-Precision Inc, Taiwan
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
      Download Paper
  • Hua, Mengyuan

    The Hong Kong University of Science and Technology
    • 18.4 TDDB and PBTI Characterizations of Fully-Recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Huang, Jian-Jang

    National Taiwan University
    • 4.2 Study of Current Collapse in Single (AlGaN/GaN) and Double (AlGaN/GaN/AlGaN) Heterostruture Enhancement Mode HEMTs

      Chun-Hsun Lee, National Taiwan University
      Shin-Yi Ho, National Taiwan University
      Jin-Xiang Zhang, Neoton Optoelectronics, Inc.
      Huang-Kai Lin, Neoton Optoelectronics, Inc.
      Jian-Jang Huang, National Taiwan University
      Download Paper
  • Huang, Kailiang

    Institute of Microelectronics, Chinese Academy of Sciences
    • 5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

      Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences
      Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences
      Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences
      Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences
      Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Huang, Linlin

    Qorvo, Inc
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
  • Huang, Xiaokang

    Qorvo
    • 17.3 The Mechanism of Cu Seed Residue Formation

      Linlin Huang, Qorvo, Inc
      Yinbao Yang, Qorvo, Inc.
      Xiaokang Huang, Qorvo
      David Gonzalez, Qorvo, Inc.
      Gaurav Gupta, Qorvo
      John Gibbon, Qorvo
      Louis Breaux, Qorvo
      Duofeng Yue, Qorvo, Inc.
      Download Paper
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Huang*, Sen

    Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
    • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

      Jinhan Zhang, University of Electronic Science and Technology of China
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
      Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Yijun Shi, University of Electronic Science and Technology of China
      Qi Zhou, University of Electronic Science and Technology of China
      Wanjun Chen, University of Electronic Science and Technology of China
      Bo Zhang, University of Electronic Science and Technology of China
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Hull, Brett

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Huo, Hongjing

    Enkris Semiconductor, Inc.
    • 20.8 Thick (6 μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices

      Liyang Zhang, Enkris Semiconductor, Inc.
      Peng Xiang, Enkris Semiconductor, Inc.
      Kai Liu, Enkris Semiconductor, Inc.
      Hongjing Huo, Enkris Semiconductor, Inc.
      Hao Ding, Enkris Semiconductor, Inc.
      Ni Yin, Enkris Semiconductor, Inc.
      Kai Cheng, Enkris Semiconductor, Inc.
      Download Paper
  • I. Made, R.

    Singapore-MIT Alliance for Research and Technology
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Iijima, Shinya

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Imhoff, Eugene

    Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
  • Ito, Yukio

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Iyechika, Yasushi

    NuFlare Technology, Inc.
    • 8.2 Single-wafer Multi-Reactor MOCVD Tool for GaN Based Devices

      Yasushi Iyechika, NuFlare Technology, Inc.
      Hideshi Takahashi, NuFlare Technology, Inc.
      Shinichi Mitani, NuFlare Technology, Inc.
      Download Paper
  • Jeong Shin, Min

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Jessen, Gregg

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Ji, Panfeng

    Peking University
    • 8.4 Good Repeatability of AlGaN/GaN HEMT on 4” Si Substrate by 5×4” Multi-Wafer Production MOCVD System

      Panfeng Ji, Peking University
      Yuxia Feng, Peking University
      Jianpeng Cheng, Peking University
      Chunyan Song, Peking University
      Xuelin Yang, Peking University
      Bo Shen, Peking University
      Download Paper
  • Jiang, Huaxing

    Hong Kong University of Science and Technology
    • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Yuying Chen, Hong Kong University of Science and Technology
      Chak Wah Tang, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
  • Jiang, Yi-Hong

    National Taiwan University
    • 4.5 Performance Improvement using Diluted KOH Passivation on Recessed-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors Grown on 8-inch Silicon(111) Substrates

      Yi-Hong Jiang, National Taiwan University
      Li-Cheng Chang, National Taiwan University
      Kai-Chieh Hsu, National Taiwan University
      I-Chen Tseng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Jin Chua, Soo

    National University of Singapore
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Johnson, Christopher

    Plasma-Therm LLC
    • 13.4 Plasma Dicing on Tape for GaAs Based Devices

      Marco Notarianni, Plasma-Therm LLC
      Tsu-Wu Chiang, Plasma-Therm, LLC
      Christopher Johnson, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC
      Thierry Lazerand, Plasma-Therm, LLC
      Download Paper
  • Johnson, Wayne

    IQE
    • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

      Luke Yates, Georgia Institute of Technology
      Chien-Fong Lo, IQE
      Tingyu Bai, University of California, Los Angeles
      Mark Goorsky, University of California, Los Angeles
      Wayne Johnson, IQE
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Jr.,

    Naval Research Laboratory
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Jun Cho, Kyu

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Jung, D.

    University of California Santa Barbara
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Jung, Hyun-Wook

    ETRI (Electronics and Telecommunications Research Institute)
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Kachi, Tetsu

    Nagoya University
    • 6.1 GaN Vertical Power Devices for Electric Vehicles

      Tetsu Kachi, Nagoya University
      Download Paper
  • Kameyama, Takehiko

    New Japan Radio Co., Ltd
    • 5.3 -Doped InGaP/GaAs Hetero-Junction p-channel FET

      Kaoru Miyakoshi, New Japan Radio Co., Ltd.
      Noaki Nomura, New Japan Radio Co., Ltd.
      Takehiko Kameyama, New Japan Radio Co., Ltd
      Download Paper
  • Kang, Xuanwu

    Institute of Microelectronics, Chinese Academy of Sciences
    • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

      Jinhan Zhang, University of Electronic Science and Technology of China
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
      Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Yijun Shi, University of Electronic Science and Technology of China
      Qi Zhou, University of Electronic Science and Technology of China
      Wanjun Chen, University of Electronic Science and Technology of China
      Bo Zhang, University of Electronic Science and Technology of China
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • KAPLAN, ILIA

    The MAX Group
    • 7.1 Rapidly Scaling Production Given Shorter Business Cycles for CS Manufacturers

      Mario Faria, The MAX Group
      ILIA KAPLAN, The MAX Group
      Mike Welch, The MAX Group
      Ariel Meyuhas, The MAX Group
      Download Paper
  • karboyan, Serge

    University of Bristol
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Kasu, Makoto

    Saga University
    • 14.1 Recent Progress of Diamond Devices for Power Applications

      Makoto Kasu, Saga University
      Toshiyuki Oishi, Saga University
      Download Paper
  • Katzer, Douglas

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Ketterson, Andrew

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Khalaf, Isaac

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Khlebnikov, Yuri

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Kitamura, Toshio

    Sciocs Company Limited
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Knoedler, Heather

    Skyworks Solutions
    • 7.4 Evaporator Overall Equipment Effectiveness

      Maureen LaFevre, Skyworks Solutions
      Heather Knoedler, Skyworks Solutions
      Download Paper
  • Kobayashi, Yasushi

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Koehler, Andrew

    Naval Research Laboratory
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
    • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Kohen, David

    ASM Belgium
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Kovacic, Stephen

    Skyworks Solutions, Inc.
    • 1.1 Technology Initiatives for 5G Radio Front-End Elements

      Stephen Kovacic, Skyworks Solutions, Inc.
      Download Paper
  • Kozak, Brian

    Momentive Performance Materials
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Krishnan, Sandeep

    Veeco Instruments Inc.
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Kub, Francis

    U.S. Naval Research Laboratory
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
  • Kub, Fritz

    Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
    • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Kuball, Martin

    University of Bristol
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Kubota, Neil

    Boeing Network and Space Systems
    • 9.3 New Failure Mode in a High-Reliability GaN HEMT Technology

      Bruce Paine, Boeing Network and Space Systems
      Neil Kubota, Boeing Network and Space Systems
      Download Paper
  • Kumar, Annie

    National University of Singapore
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Kurahashi, Naoko

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Kurahashi, Teruo

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Kurpas, Paul

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Kuzuhara, Masaaki

    University of Fukui
    • 4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation

      Atsuya Suzuki, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Kwon, Daewon

    Veeco Instruments Inc.
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Kwon, Joonbum

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Kyun Ahn, Ho

    Electronics and Telecommunications Research Institute
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • LaFevre, Maureen

    Skyworks Solutions
    • 7.4 Evaporator Overall Equipment Effectiveness

      Maureen LaFevre, Skyworks Solutions
      Heather Knoedler, Skyworks Solutions
      Download Paper
  • Lagowski, Jacek

    Semilab SDI
    • 11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach

      Marshall Wilson, Semilab SDI
      Alexandre Savtchouk, Semilab SDI
      Dmitriy Marinskiy, Semilab SDI
      Jacek Lagowski, Semilab SDI
      Download Paper
  • Lan, Hao-Yu

    National Taiwan University
    • 19.4 406 MHz Modulation Bandwidth of GaN-Based Light-Emitting Diodes with Improved Transparent  p-Contact Design

      Hao-Yu Lan, National Taiwan University
      Ying-Yung Lin, National Taiwan University
      Chi-Hsiang Chang, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Lau, K.

    Hong Kong University of Science and Technology
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Lauffer, Peter

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Lazerand, Thierry

    Plasma-Therm, LLC
    • 13.4 Plasma Dicing on Tape for GaAs Based Devices

      Marco Notarianni, Plasma-Therm LLC
      Tsu-Wu Chiang, Plasma-Therm, LLC
      Christopher Johnson, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC
      Thierry Lazerand, Plasma-Therm, LLC
      Download Paper
  • Leach, Jacob

    Kyma Technologies, Inc.
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Ledoux, Olivier

    SOITEC S.A.
    • 5.4 InP Based Engineered Substrates for Photonics and RF Applications

      Eric Guiot, SOITEC
      Alexis Drouin, SOITEC S.A.
      Olivier Ledoux, SOITEC S.A.
      Muriel Martinez, SOITEC S.A.
      Catherine Cadieux, Univ. Grenoble Alpes
      Download Paper
  • Lee, Cathy

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Lee, Chun-Hsun

    National Taiwan University
    • 4.2 Study of Current Collapse in Single (AlGaN/GaN) and Double (AlGaN/GaN/AlGaN) Heterostruture Enhancement Mode HEMTs

      Chun-Hsun Lee, National Taiwan University
      Shin-Yi Ho, National Taiwan University
      Jin-Xiang Zhang, Neoton Optoelectronics, Inc.
      Huang-Kai Lin, Neoton Optoelectronics, Inc.
      Jian-Jang Huang, National Taiwan University
      Download Paper
  • Lee, Hochoong

    Teikoku Taping System, Inc.
    • 10.3 Design Rule Study of Transfer Molding Process on Polymer Cavity Packages

      Nao Honda, Nippon Kayaku Co., Ltd.
      Yoshihiro Hakone, Nippon Kayaku Co., Ltd.
      Yoshiyuki Ono, Nippon Kayaku Co., Ltd.
      Michael Quillen, MicroChem Corp.
      Hochoong Lee, Teikoku Taping System, Inc.
      Download Paper
  • Lee, Hsuan-Ping

    University of Illinois Urbana Champaign
    • 16.2 Scaling AlGaN/GaN High Electron Mobility Transistor Structures onto 200-mm Silicon (111) Substrates through Novel Buffer Layer Configurations

      Hsuan-Ping Lee, University of Illinois Urbana Champaign
      Josh Perozek, University of Illinois Urbana Champaign
      Can Bayram, University of Illinois Urbana Champaign
      Download Paper
  • Lee, M.

    University of Illinois Urbana-Champaign
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Leedy, Kevin

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Leiers, Ralf

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Li, Benjamin

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Li, Bo-Hong

    Chang Gung University
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
      Download Paper
  • Li, Q.

    Hong Kong University of Science and Technology
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Li, Vivian

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Lian, Chuanxin

    MACOM Technology Solutions Inc.
    • 9.4 Statistical Analysis of Lifetimes of MIM Capacitors with Monte Carlo Simulation

      Mingda Zhu, Cornell University
      Chuanxin Lian, MACOM Technology Solutions Inc.
      Huili Xing, Cornell University
      Allen Hanson, MACOM Technology Solutions Inc.
      Download Paper
  • Lin, Huang-Kai

    Neoton Optoelectronics, Inc.
    • 4.2 Study of Current Collapse in Single (AlGaN/GaN) and Double (AlGaN/GaN/AlGaN) Heterostruture Enhancement Mode HEMTs

      Chun-Hsun Lee, National Taiwan University
      Shin-Yi Ho, National Taiwan University
      Jin-Xiang Zhang, Neoton Optoelectronics, Inc.
      Huang-Kai Lin, Neoton Optoelectronics, Inc.
      Jian-Jang Huang, National Taiwan University
      Download Paper
  • Lin, J.

    Massachusetts Institute of Technology
    • 3.2 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

      A Vardi, Massachusetts Institute of Technology
      J. Lin, Massachusetts Institute of Technology
      W. Lu, Massachusetts Institute of Technology
      X. Zhao, Massachusetts Institute of Technology
      J. del Alamo, Massachusetts Institute of Technology
      Download Paper
  • Lin, Kechuang

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Lin, Ying-Yung

    National Taiwan University
    • 19.4 406 MHz Modulation Bandwidth of GaN-Based Light-Emitting Diodes with Improved Transparent  p-Contact Design

      Hao-Yu Lan, National Taiwan University
      Ying-Yung Lin, National Taiwan University
      Chi-Hsiang Chang, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Lin, Yishu

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Lin, Zhidong

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Liu, A.

    University of California Santa Barbara
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Liu, Chao

    Hong Kong University of Science and Technology
    • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Yuying Chen, Hong Kong University of Science and Technology
      Chak Wah Tang, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
  • Liu, Cheng

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors

      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.
      Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.
      Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.
      Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.
      Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper
  • Liu, Dong

    University of Oxford, University of Bristol
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
  • Liu, Honggang

    Institute of Microelectronics, Chinese Academy of Sciences
    • 5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

      Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences
      Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences
      Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences
      Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences
      Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Liu, Kai

    Enkris Semiconductor, Inc.
    • 20.8 Thick (6 μm) n-type GaN-on-Si Epi-Layers for Vertical Power Devices

      Liyang Zhang, Enkris Semiconductor, Inc.
      Peng Xiang, Enkris Semiconductor, Inc.
      Kai Liu, Enkris Semiconductor, Inc.
      Hongjing Huo, Enkris Semiconductor, Inc.
      Hao Ding, Enkris Semiconductor, Inc.
      Ni Yin, Enkris Semiconductor, Inc.
      Kai Cheng, Enkris Semiconductor, Inc.
      Download Paper
  • Liu, Richard

    University of Illinois at Urbana Champaign
    • 15.4 Cubic Phase GaN Integrated on CMOS-Compatible Silicon (100)

      Richard Liu, University of Illinois at Urbana Champaign
      Can Bayram, University of Illinois Urbana Champaign
      Download Paper
  • Liu, Shenghou

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors

      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.
      Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.
      Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.
      Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.
      Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper
  • Liu, Taihui

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Liu, Xinyu

    Institute of Microelectronics, Chinese Academy of Sciences
    • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

      Jinhan Zhang, University of Electronic Science and Technology of China
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
      Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Yijun Shi, University of Electronic Science and Technology of China
      Qi Zhou, University of Electronic Science and Technology of China
      Wanjun Chen, University of Electronic Science and Technology of China
      Bo Zhang, University of Electronic Science and Technology of China
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Liu, Xuran

    Xiamen San'an Integrated Circuit Co., Ltd.
    • 6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors

      Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.
      Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.
      Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.
      Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.
      Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.
      Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.
      Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd.
      Download Paper
  • Lo, Chien-Fong

    IQE
    • 9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

      Luke Yates, Georgia Institute of Technology
      Chien-Fong Lo, IQE
      Tingyu Bai, University of California, Los Angeles
      Mark Goorsky, University of California, Los Angeles
      Wayne Johnson, IQE
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Lossy, Richard

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
    • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Lu, W.

    Massachusetts Institute of Technology
    • 3.2 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

      A Vardi, Massachusetts Institute of Technology
      J. Lin, Massachusetts Institute of Technology
      W. Lu, Massachusetts Institute of Technology
      X. Zhao, Massachusetts Institute of Technology
      J. del Alamo, Massachusetts Institute of Technology
      Download Paper
  • Lube, Michael

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Luenenbuerger, Markus

    AIXTRON SE
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Luna, Lunet

    U.S. Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Lupo, Darrell

    Qorvo, Inc
    • 17.2 Optical Defect Investigation and Drill Down Automation

      Darrell Lupo, Qorvo, Inc
      Eric McCormick, Qorvo, Inc.
      Michelle Colorado, Qorvo, Inc.
      Mike McClure
      Craig Hall, Qorvo
      Download Paper
  • Luu, Lena

    Global Communications Semiconductor, LLC
    • 12.3 NiCr Sheet Resistance Adjustment During Wafer Fabrication Process

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Alex Vigo, Global Communications Seminconductor, LLC
      Download Paper
  • Magadia, Jesus

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Mahadik, N.

    U.S. Naval Research Laboratory
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Mahon, Steven

    Feldman Engineering
    • 1.3 The 5G Effect on RF Filter Technologies

      Steven Mahon, Feldman Engineering
      Download Paper
  • Marcelo, Earl

    Veeco MOCVD Operations
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Marinskiy, Dmitriy

    Semilab SDI
    • 11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach

      Marshall Wilson, Semilab SDI
      Alexandre Savtchouk, Semilab SDI
      Dmitriy Marinskiy, Semilab SDI
      Jacek Lagowski, Semilab SDI
      Download Paper
  • Martinez, Muriel

    SOITEC S.A.
    • 5.4 InP Based Engineered Substrates for Photonics and RF Applications

      Eric Guiot, SOITEC
      Alexis Drouin, SOITEC S.A.
      Olivier Ledoux, SOITEC S.A.
      Muriel Martinez, SOITEC S.A.
      Catherine Cadieux, Univ. Grenoble Alpes
      Download Paper
  • Mason, Sarah

    Broadcom
    • 12.1 Reduction of Metal Defect Formation through Process Optimization

      Sarah Mason, Broadcom
      Tim Valade, Broadcom
      Joseph Chiavetta, Broadcom
      Dan Edwards, Broadcom
      Download Paper
  • Mausolf, Karsten

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • May Lau, Kei

    Hong Kong University of Science and Technology
    • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Yuying Chen, Hong Kong University of Science and Technology
      Chak Wah Tang, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
  • McCandless, Jonathan

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • McCarthy, Robert

    MicroLink Devices
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • McClure, Mike

    • 17.2 Optical Defect Investigation and Drill Down Automation

      Darrell Lupo, Qorvo, Inc
      Eric McCormick, Qorvo, Inc.
      Michelle Colorado, Qorvo, Inc.
      Mike McClure
      Craig Hall, Qorvo
      Download Paper
  • McCormick, Eric

    Qorvo, Inc.
    • 17.2 Optical Defect Investigation and Drill Down Automation

      Darrell Lupo, Qorvo, Inc
      Eric McCormick, Qorvo, Inc.
      Michelle Colorado, Qorvo, Inc.
      Mike McClure
      Craig Hall, Qorvo
      Download Paper
  • Meeder, Michael

    Qorvo, Inc.
    • 7.3 Stacked Capacitors and Adaptive Manufacturing

      Peter J. Zampardi, Qorvo, Inc.
      Michael Meeder, Qorvo, Inc.
      Brian Moser, Qorvo, Inc.
      Download Paper
  • Meyer, David

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Meyuhas, Ariel

    The MAX Group
    • 7.1 Rapidly Scaling Production Given Shorter Business Cycles for CS Manufacturers

      Mario Faria, The MAX Group
      ILIA KAPLAN, The MAX Group
      Mike Welch, The MAX Group
      Ariel Meyuhas, The MAX Group
      Download Paper
  • Micovic, Miroslav

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Middleton*, Jeremy

    TriQuint Semiconductor, Inc.
    • 17.1 RF DS Yield Improvement through ZONAL Technique for pHEMT Product

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Frank Barnes, Qorvo Inc.
      Andrew Choo, UP! Strategies Consulting
      Download Paper
  • Minobe, S.

    Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Mishima, Tomoyoshi

    Hosei University
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Mitani, Shinichi

    NuFlare Technology, Inc.
    • 8.2 Single-wafer Multi-Reactor MOCVD Tool for GaN Based Devices

      Yasushi Iyechika, NuFlare Technology, Inc.
      Hideshi Takahashi, NuFlare Technology, Inc.
      Shinichi Mitani, NuFlare Technology, Inc.
      Download Paper
  • Mitrovic, Bojan

    Veeco MOCVD Operations.
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Miyakoshi, Kaoru

    New Japan Radio Co., Ltd.
    • 5.3 -Doped InGaP/GaAs Hetero-Junction p-channel FET

      Kaoru Miyakoshi, New Japan Radio Co., Ltd.
      Noaki Nomura, New Japan Radio Co., Ltd.
      Takehiko Kameyama, New Japan Radio Co., Ltd
      Download Paper
  • Moens, Peter

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • Moser, Brian

    Qorvo, Inc.
    • 7.3 Stacked Capacitors and Adaptive Manufacturing

      Peter J. Zampardi, Qorvo, Inc.
      Michael Meeder, Qorvo, Inc.
      Brian Moser, Qorvo, Inc.
      Download Paper
  • Moser, Neil

    George Mason University
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Nakamura, Tohru

    Hosei University
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Nakanisihi, F.

    Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Nakata, Yoshihiro

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Narita, Yoshinobu

    Sciocs Company Limited
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Natarajan, Sudarshan

    Momentive Performance Materials
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Nath, Anindya

    George Mason University
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Nepal, Neeraj

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Nevers, Corey

    Qorvo, Inc
    • 17.5 Chemical Attack of a pHEMT Channel Due to Poor Passivation Coverage

      Robert Waco, Qorvo Inc.
      Corey Nevers, Qorvo, Inc
      Val Besong, Qorvo, Inc.
      Download Paper
  • Niida, Yoshitaka

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Nomura, Noaki

    New Japan Radio Co., Ltd.
    • 5.3 -Doped InGaP/GaAs Hetero-Junction p-channel FET

      Kaoru Miyakoshi, New Japan Radio Co., Ltd.
      Noaki Nomura, New Japan Radio Co., Ltd.
      Takehiko Kameyama, New Japan Radio Co., Ltd
      Download Paper
  • Norman, J.

    University of California Santa Barbara
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
      Download Paper
  • Notarianni, Marco

    Plasma-Therm LLC
    • 13.4 Plasma Dicing on Tape for GaAs Based Devices

      Marco Notarianni, Plasma-Therm LLC
      Tsu-Wu Chiang, Plasma-Therm, LLC
      Christopher Johnson, Plasma-Therm LLC
      Russ Westerman, Plasma-Therm, LLC
      Thierry Lazerand, Plasma-Therm, LLC
      Download Paper
  • Nutter, Richard

    HRL Laboratories
    • 10.2 Effect of Different Developer Types on Resist Dimension and Side Wall Profile

      Gunjana Sharma, HRL Laboratories
      Richard Nutter, HRL Laboratories
      Download Paper
  • Obeloer, Thomas

    Element Six
    • 20.10 Overcoming High Power Limitation of Thin Film Resistors at GHz Frequencies Using CVD Diamond Substrates

      Julian Anaya, Anaya Scientific Consultancy
      Thomas Obeloer, Element Six
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Odnoblyudov, Vladimir

    QROMIS, Inc.
    • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

      Karl Hobart, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Anindya Nath, George Mason University
      Jennifer Hite, U.S. Naval Research Laboratory
      N. Mahadik, U.S. Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Ozgur Aktas, Qromis, Inc.
      Vladimir Odnoblyudov, QROMIS, Inc.
      Cem Basceri, QROMIS, Inc.
      Download Paper
  • Ohta, Hiroshi

    Hosei University
    • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

      Fumimasa Horikiri, Sciocs Company Limited
      Yoshinobu Narita, Sciocs Company Limited
      Takehiro Yoshida, Sciocs Company Limited
      Toshio Kitamura, Sciocs Company Limited
      Yukio Abe, Sciocs Company Limited
      Hiroshi Ohta, Hosei University
      Tohru Nakamura, Hosei University
      Tomoyoshi Mishima, Hosei University
      Download Paper
  • Oishi, Toshiyuki

    Saga University
    • 14.1 Recent Progress of Diamond Devices for Power Applications

      Makoto Kasu, Saga University
      Toshiyuki Oishi, Saga University
      Download Paper
  • Okamoto, Naoya

    Fujitsu Limited and Fujitsu Laboratories Ltd.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Okano, Ayumi

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Olziersky, A.

    IBM-Research Zurich
    • 10.1 Comparison of Charge Dissipation Layers and Dose Sensitivity of PMMA Electron Beam Lithography on Transparent Insulating Substrates such as GaN

      Anna Hambitzer, ETH-Zurich
      A. Olziersky, IBM-Research Zurich
      Tamara Saranovac, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Ono, Yoshiyuki

    Nippon Kayaku Co., Ltd.
    • 10.3 Design Rule Study of Transfer Molding Process on Polymer Cavity Packages

      Nao Honda, Nippon Kayaku Co., Ltd.
      Yoshihiro Hakone, Nippon Kayaku Co., Ltd.
      Yoshiyuki Ono, Nippon Kayaku Co., Ltd.
      Michael Quillen, MicroChem Corp.
      Hochoong Lee, Teikoku Taping System, Inc.
      Download Paper
  • Osada, Hideki

    Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Osipov, Konstantin

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Ostermay, Ina

    Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
    • 12.4 Iridium Plug Technology for AlGaN/GaN HEMT Short-Gate Fabrication

      Konstantin Osipov, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Richard Lossy, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Paul Kurpas, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH),
      Sergey Chevtchenko, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Ina Ostermay, Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH)
      Download Paper
  • Ostinelli, Olivier

    ETH-Zurich
    • 5.1 Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance

      Tamara Saranovac, ETH-Zurich
      Olivier Ostinelli, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Paine, Bruce

    Boeing Network and Space Systems
    • 9.3 New Failure Mode in a High-Reliability GaN HEMT Technology

      Bruce Paine, Boeing Network and Space Systems
      Neil Kubota, Boeing Network and Space Systems
      Download Paper
  • Pal, Debdas

    MACOM
    • 19.1 Manufacturing of 10 GHz InGaAs/InP p-i-n Photodetectors in GaAs Wafer Fabrication Facility

      Debdas Pal, MACOM
      Lisza Elliot, MACOM
      James Carter, MACOM
      Download Paper
  • Pandey, Saurabh

    NXP Semiconductors
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Paranjpe, Ajit

    Veeco Instruments
    • 8.1 Real-Time Control of Layer Thickness and Thickness Uniformity for Single Wafer Reactor MOCVD Systems

      Sandeep Krishnan, Veeco Instruments Inc.
      Michael Chansky, Veeco Instruments Inc.
      Daewon Kwon, Veeco Instruments Inc.
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ronald Arif, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Park, Himchan

    Korea Electrotechnology Research Institute
    • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

      Dong Young Kim, Gyeongsang National University
      Ogyun Seok, Korea Electrotechnology Research Institute
      Himchan Park, Korea Electrotechnology Research Institute
      Wook Bahng, Korea Electrotechnology Research Institute
      Hyoung Woo Kim, Korea Electrotechnology Research Institute
      Ki Cheol Park, Gyeongsang National University
      Download Paper
  • Pavlidis, Georges

    Georgia Institute of Technology
    • 11.1 Monitoring the Transient Thermal Response of AlGaN/GaN HEMTs using Transient Thermoreflectance Imaging

      Georges Pavlidis, Georgia Institute of Technology
      Samuel Graham, Georgia Institute of Technology
      Download Paper
  • Peng, Jungyi

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Peng, Yu-Ting

    University of Illinois at Urbana Champaign
    • 19.2 Design and Fabrication of High-Speed PIN Photodiodes for 50 Gb/s Optical Fiber Links

      Ardy Winoto, University of Illinois at Urbana Champaign
      Yu-Ting Peng, University of Illinois at Urbana Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Perozek, Josh

    University of Illinois Urbana Champaign
    • 16.2 Scaling AlGaN/GaN High Electron Mobility Transistor Structures onto 200-mm Silicon (111) Substrates through Novel Buffer Layer Configurations

      Hsuan-Ping Lee, University of Illinois Urbana Champaign
      Josh Perozek, University of Illinois Urbana Champaign
      Can Bayram, University of Illinois Urbana Champaign
      Download Paper
  • Pomeroy, James

    University of Bristol
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
  • Qian, Qingkai

    The Hong Kong University of Science and Technology
    • 18.4 TDDB and PBTI Characterizations of Fully-Recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Qiu, Junyi

    University of Illinois at Urbana-Champaign
    • 19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification

      Junyi Qiu, University of Illinois at Urbana-Champaign
      Hsiao-Lun Wang, University of Illinois at Urbana-Champaign
      Curtis Wang, University of Illinois at Urbana-Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
      Download Paper
  • Qu, Hao

    Momentive Performance Materials
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Quan, Wei

    ETH-Zurich
    • 20.11 Comparison of Ion-Milling and Ion-Sputtering to Remove Edge Roughness of EBL Defined Emitter Metallization in InP/GaAsSb DHBTs

      Wei Quan, ETH-Zurich
      Ralf Flueckiger, ETH-Zurich
      Maria Alexandrova, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Quillen, Michael

    MicroChem Corp.
    • 10.3 Design Rule Study of Transfer Molding Process on Polymer Cavity Packages

      Nao Honda, Nippon Kayaku Co., Ltd.
      Yoshihiro Hakone, Nippon Kayaku Co., Ltd.
      Yoshiyuki Ono, Nippon Kayaku Co., Ltd.
      Michael Quillen, MicroChem Corp.
      Hochoong Lee, Teikoku Taping System, Inc.
      Download Paper
  • R. Boyd, Adam

    AIXTRON SE, Herzogenrath
    • 8.3 Blue LED MOCVD Manufacturing Yield Optimization

      Adam R. Boyd, AIXTRON SE, Herzogenrath
      Olivier Feron, AIXTRON SE
      Peter Lauffer, AIXTRON SE
      Hannes Behmenburg, AIXTRON SE
      Markus Luenenbuerger, AIXTRON SE
      Ralf Leiers, AIXTRON SE
      Arthur Beckers, AIXTRON SE
      Michael Heuken, AIXTRON SE
      Download Paper
  • Reddy, Rekha

    MicroLink Devices
    • 16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet Etching

      Chris Youtsey, MicroLink Devices, Inc.
      Robert McCarthy, MicroLink Devices
      Rekha Reddy, MicroLink Devices
      Andy Xie, Qorvo
      Ed Beam, Qorvo
      Jingshan Wang, Notre Dame
      Patrick Fay, Notre Dame
      Eric Carlson, Virginia Tech
      Lou Guido, Virginia Tech
      Download Paper
  • Riddell, Kevin

    SPTS Technologies Ltd.
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Ringel, Steven

    the Ohio State University
    • 11.3 Ec-0.90 eV Trap-Induced Threshold Voltage Instability in GaN/Si MISHEMTs

      Wenyuan Sun, the Ohio State University
      Steven Ringel, the Ohio State University
      Aaron Arehart, the Ohio State University
      Download Paper
  • Ruan, Ju-Ai

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Saito, Kenji

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Sang Nguyen, Xuan

    Singapore-MIT Alliance for Research and Technology
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Santos, Dayward

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Saranovac, Tamara

    ETH-Zurich
    • 5.1 Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance

      Tamara Saranovac, ETH-Zurich
      Olivier Ostinelli, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
    • 10.1 Comparison of Charge Dissipation Layers and Dose Sensitivity of PMMA Electron Beam Lithography on Transparent Insulating Substrates such as GaN

      Anna Hambitzer, ETH-Zurich
      A. Olziersky, IBM-Research Zurich
      Tamara Saranovac, ETH-Zurich
      Colombo Bolognesi, ETH-Zurich
      Download Paper
  • Sato, F.

    Sumiden Semiconductor Materials Co Sumitomo Electric Industries
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Sato, Masaru

    Fujitsu Laboratories LTD.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Sato, Motonobu

    Fujitsu Laboratories Ltd.
    • 15.2 Heterogeneous Integration of Microwave GaN Power Amplifiers with Si Matching Circuits

      Motonobu Sato, Fujitsu Laboratories Ltd.
      Yasushi Kobayashi, Fujitsu Laboratories LTD.
      Yoshitaka Niida, Fujitsu Laboratories LTD.
      Kenji Saito, Fujitsu Laboratories LTD.
      Naoko Kurahashi, Fujitsu Laboratories LTD.
      Ayumi Okano, Fujitsu Laboratories LTD.
      Yukio Ito, Fujitsu Laboratories LTD.
      Teruo Kurahashi, Fujitsu Laboratories LTD.
      Shinya Iijima, Fujitsu Laboratories LTD.
      Yoshihiro Nakata, Fujitsu Laboratories LTD.
      Masaru Sato, Fujitsu Laboratories LTD.
      Naoya Okamoto, Fujitsu Limited and Fujitsu Laboratories Ltd.
      Download Paper
  • Savtchouk, Alexandre

    Semilab SDI
    • 11.2 Bias Stress-Induced Interfacial Instability Characterization in Oxidized SiC with Novel Non-contact Approach

      Marshall Wilson, Semilab SDI
      Alexandre Savtchouk, Semilab SDI
      Dmitriy Marinskiy, Semilab SDI
      Jacek Lagowski, Semilab SDI
      Download Paper
  • Schneider, Tom

    Kyma Technologies, Inc.
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Seng Tan, Chuan

    Nanyang Technological University
    • 15.3 Growth of InGaAs-Channel Transistor Layers on Large-Scale Si Wafers for Hetero-Integration with Si CMOS

      Xuan Sang Nguyen, Singapore-MIT Alliance for Research and Technology
      Sachin Yadav, National University of Singapore
      Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology
      David Kohen, ASM Belgium
      Annie Kumar, National University of Singapore
      R. I. Made, Singapore-MIT Alliance for Research and Technology
      Xiao Gong, National University of Singapore
      Kenneth Eng Kian Lee, Singapore-MIT Alliance for Research and Technology
      Chuan Seng Tan, Nanyang Technological University
      Soon Fatt Yoon, Nanyang Technological University
      Eugene Fitzgerald, Massachusetts Institute of Technology
      Soo Jin Chua, National University of Singapore
      Download Paper
  • Seok, Ogyun

    Korea Electrotechnology Research Institute
    • 6.3 A Low Knee Voltage of 4H-SiC TSBS Employing Poly-Si/Ni Dual Schottky Contacts

      Dong Young Kim, Gyeongsang National University
      Ogyun Seok, Korea Electrotechnology Research Institute
      Himchan Park, Korea Electrotechnology Research Institute
      Wook Bahng, Korea Electrotechnology Research Institute
      Hyoung Woo Kim, Korea Electrotechnology Research Institute
      Ki Cheol Park, Gyeongsang National University
      Download Paper
  • Shaffer, Gregory

    Momentive Performance Materials
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Shahin, David

    University of Maryland
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Sharma, Gunjana

    HRL Laboratories
    • 10.2 Effect of Different Developer Types on Resist Dimension and Side Wall Profile

      Gunjana Sharma, HRL Laboratories
      Richard Nutter, HRL Laboratories
      Download Paper
  • Shen, Bo

    Peking University
    • 8.4 Good Repeatability of AlGaN/GaN HEMT on 4” Si Substrate by 5×4” Multi-Wafer Production MOCVD System

      Panfeng Ji, Peking University
      Yuxia Feng, Peking University
      Jianpeng Cheng, Peking University
      Chunyan Song, Peking University
      Xuelin Yang, Peking University
      Bo Shen, Peking University
      Download Paper
  • Shi, Yijun

    University of Electronic Science and Technology of China
    • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

      Jinhan Zhang, University of Electronic Science and Technology of China
      Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
      Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
      Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
      Yijun Shi, University of Electronic Science and Technology of China
      Qi Zhou, University of Electronic Science and Technology of China
      Wanjun Chen, University of Electronic Science and Technology of China
      Bo Zhang, University of Electronic Science and Technology of China
      Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Shimon, Robert

    Keysight Technologies, Inc.
    • 1.2 Commercialization of Millimeter-Wave Semiconductors for 5G – A Unique View from Test & Measurement

      Daniel Thomasson, Keysight Technologies, Inc.
      Robert Shimon, Keysight Technologies, Inc.
      Download Paper
  • Smith, Trish

    Qorvo Inc.
    • 20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)

      Yongjie Cui, Qorvo Inc.
      John Hitt, Qorvo Inc.
      Tso-Min Chou, Qorvo Inc.
      Shuoqi Chen, Qorvo Inc.
      David Gonzalez, Qorvo, Inc.
      Yinbao Yang, Qorvo, Inc.
      Trish Smith, Qorvo Inc.
      Ju-Ai Ruan, Qorvo Inc.
      Vivian Li, Qorvo Inc.
      Cathy Lee, Qorvo Inc.
      Andrew Ketterson, Qorvo Inc.
      Download Paper
  • Song, Chunyan

    Peking University
    • 8.4 Good Repeatability of AlGaN/GaN HEMT on 4” Si Substrate by 5×4” Multi-Wafer Production MOCVD System

      Panfeng Ji, Peking University
      Yuxia Feng, Peking University
      Jianpeng Cheng, Peking University
      Chunyan Song, Peking University
      Xuelin Yang, Peking University
      Bo Shen, Peking University
      Download Paper
  • Stevens, Kevin

    Northrop Grumman SYNOPTICS
    • 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material

      John Blevins, Air Force Research Laboratory
      Darren Thomson, Air Force Research Laboratory
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Greg Foundos, Northrop Grumman SYNOPTICS
      Download Paper
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Storm, David

    US Naval Research Laboratory
    • 13.2 Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

      Matthew Hardy, US Naval Research Laboratory
      Brian Downey, US Naval Research Laboratory
      David Meyer, US Naval Research Laboratory
      Neeraj Nepal, US Naval Research Laboratory
      David Storm, US Naval Research Laboratory
      Douglas Katzer, US Naval Research Laboratory
      Download Paper
  • Su, Jie

    Veeco Instruments
    • 20.7 Process Condition Optimization for High Throughput and High Efficiency Growth of the AlGaN/GaN HEMT Structure in a Single Wafer Rotating Disc MOCVD Reactor

      Bojan Mitrovic, Veeco MOCVD Operations.
      Randhir Bubber, Veeco Instruments
      Jie Su, Veeco Instruments
      Earl Marcelo, Veeco MOCVD Operations
      Mandar Deshpande, Veeco Instruments Inc.
      Ajit Paranjpe, Veeco Instruments
      Download Paper
  • Sun, Bing

    Institute of Microelectronics, Chinese Academy of Sciences
    • 5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

      Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences
      Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences
      Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences
      Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences
      Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences
      Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences
      Download Paper
  • Sun, Wenyuan

    the Ohio State University
    • 11.3 Ec-0.90 eV Trap-Induced Threshold Voltage Instability in GaN/Si MISHEMTs

      Wenyuan Sun, the Ohio State University
      Steven Ringel, the Ohio State University
      Aaron Arehart, the Ohio State University
      Download Paper
  • Sup Yoon, Hyung

    Electronics and Telecommunications Research Institute
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Suzuki, Atsuya

    University of Fukui
    • 4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation

      Atsuya Suzuki, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Tack, Marnix

    ON Semiconductor, Corp. R&D
    • 13.3 Recessing Process for Au-free Ohmic Contacts Formation on AlGaN/GaN Heterostructures with AlN Spacer

      Aurore Constant, ON Semiconductor, Corp. R&D
      Joris Baele, ON Semiconductor, Corp. R&D
      Peter Coppens, ON Semiconductor, Corp. R&D
      Freddy De Pestel, ON Semiconductor, Corp. R&D
      Peter Moens, ON Semiconductor, Corp. R&D
      Marnix Tack, ON Semiconductor, Corp. R&D
      Download Paper
  • Tadjer, Marko

    Naval Research Laboratory
    • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Eugene Imhoff, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

      Andrew Koehler, Naval Research Laboratory
      Travis Anderson, Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Download Paper
    • 18.3 Threshold Voltage Control by Tuning Charge in ZrO2 Gate Dielectrics for Normally-off AlGaN/GaN MOS-HEMTs

      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      David Shahin, University of Maryland
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Francis Kub, U.S. Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Download Paper
    • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

      David Shahin, University of Maryland
      Travis Anderson, Naval Research Laboratory
      Virginia Wheeler, U.S. Naval Research Laboratory
      Marko Tadjer, Naval Research Laboratory
      Lunet Luna, U.S. Naval Research Laboratory
      Andrew Koehler, Naval Research Laboratory
      Karl Hobart, Naval Research Laboratory
      Charles Eddy, US Naval Research Laboratory
      Jr., Naval Research Laboratory
      Fritz Kub, Naval Research Laboratory
      Aris Christou, University of Maryland-College Park
      Download Paper
  • Tai, Joe

    HRL Laboratories, LLC.
    • 9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics

      Shawn Burnham, HRL Laboratories, LLC.
      Ross Bowen, HRL Laboratories, LLC.
      Joe Tai, HRL Laboratories, LLC.
      David Brown, HRL Laboratories, LLC.
      Robert Grabar, HRL Laboratories, LLC.
      Dayward Santos, HRL Laboratories, LLC.
      Jesus Magadia, HRL Laboratories, LLC.
      Isaac Khalaf, HRL Laboratories, LLC.
      Miroslav Micovic, HRL Laboratories, LLC.
      Download Paper
  • Takahashi, Hideshi

    NuFlare Technology, Inc.
    • 8.2 Single-wafer Multi-Reactor MOCVD Tool for GaN Based Devices

      Yasushi Iyechika, NuFlare Technology, Inc.
      Hideshi Takahashi, NuFlare Technology, Inc.
      Shinichi Mitani, NuFlare Technology, Inc.
      Download Paper
  • Tang, Gaofei

    The Hong Kong University of Science and Technology
    • 18.4 TDDB and PBTI Characterizations of Fully-Recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

      Mengyuan Hua, The Hong Kong University of Science and Technology
      Qingkai Qian, The Hong Kong University of Science and Technology
      Jin Wei, The Hong Kong University of Science and Technology
      Zhaofu Zhang, The Hong Kong University of Science and Technology
      Gaofei Tang, The Hong Kong University of Science and Technology
      Kevin Chen, The Hong Kong University of Science and Technology
      Download Paper
  • Tetlak, Stephen

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Tey, Dan

    Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
    • 7.2 III-V Compound Semiconductor Manufacturing in China: From Optoelectronic to Microwave Applications

      Wenxin Chen, Xiamen Sanan Integrated Circuit (Sanan-IC) Co.,Ltd
      John Wang, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Qingfang Zhu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yanli Xu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Xiawei Zhong, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Yishu Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Jungyi Peng, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Benjamin Li, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Dan Tey, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Taihui Liu, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Zhidong Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Kechuang Lin, Xiamen San'an Integrated Circuit (Sanan-IC) Co., Ltd
      Download Paper
  • Thomas, Dave

    SPTS Technologies Ltd.
    • 20.12 Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications

      Kyu Jun Cho, ETRI (Electronics and Telecommunications Research Institute)
      Byong Gue Min, ETRI (Electronics and Telecommunications Research Institute)
      Ho Kyun Ahn, Electronics and Telecommunications Research Institute
      Hae Cheon Kim, ETRI (Electronics and Telecommunications Research Institute)
      Hyung Sup Yoon, Electronics and Telecommunications Research Institute
      Hyun-Wook Jung, ETRI (Electronics and Telecommunications Research Institute)
      Jae-Won Do, ETRI (Electronics and Telecommunications Research Institute)
      Min Jeong Shin, ETRI (Electronics and Telecommunications Research Institute)
      Sung-Jae Chang, ETRI (Electronics and Telecommunications Research Institute)
      Jong Won Lim, Electronics and Telecommunications Research Institute
      Anthony Barker, SPTS Technologies Ltd.
      Alex Wood, SPTS Technologies Ltd.
      Kevin Riddell, SPTS Technologies Ltd.
      Gordon Horsley, SPTS Technologies Ltd.
      Dave Thomas, SPTS Technologies Ltd.
      Download Paper
  • Thomasson, Daniel

    Keysight Technologies, Inc.
    • 1.2 Commercialization of Millimeter-Wave Semiconductors for 5G – A Unique View from Test & Measurement

      Daniel Thomasson, Keysight Technologies, Inc.
      Robert Shimon, Keysight Technologies, Inc.
      Download Paper
  • Thomson, Darren

    Air Force Research Laboratory
    • 14.2 Growth of Single Crystal Beta-Gallium Oxide (β-Ga2O3) Semiconductor Material

      John Blevins, Air Force Research Laboratory
      Darren Thomson, Air Force Research Laboratory
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Greg Foundos, Northrop Grumman SYNOPTICS
      Download Paper
  • Tokuda, Hirokuni

    University of Fukui
    • 4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation

      Atsuya Suzuki, University of Fukui
      Joel Asubar, University of Fukui
      Hirokuni Tokuda, University of Fukui
      Masaaki Kuzuhara, University of Fukui
      Download Paper
  • Tom, Steve

    Texas Instruments, Inc.
    • 2.2 Leveraging Power Electronics Acumen to Accelerate the Adoption Ramp of Gallium Nitride

      Steve Tom, Texas Instruments, Inc.
      Sandeep Bahl, Texas Instruments, Inc.
      Masoud Beheshti, Texas Instruments, Inc.
      Paul Brohlin, Texas Instruments, Inc.
      Stephanie Butler, Texas Instruments, Inc.
      David Zinn, Texas Instruments, Inc.
      Download Paper
  • Tomek, Creighton

    Momentive Performance Materials
    • 20.4 Carbide Coatings for MOCVD Wafer Carrier Protection

      Hao Qu, Momentive Performance Materials
      Wei Fan, Momentive Performance Materials Inc
      Sudarshan Natarajan, Momentive Performance Materials
      Creighton Tomek, Momentive Performance Materials
      Gregory Shaffer, Momentive Performance Materials
      Brian Kozak, Momentive Performance Materials
  • Tran, Van

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Trujillo, Jaime

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
      Download Paper
  • Tsai, Jung-Ruey

    Department of Photonics and Communication Engineering, Asia University, Taiwan
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan
      Jung-Ruey Tsai, Department of Photonics and Communication Engineering, Asia University, Taiwan
      Download Paper
  • Tseng, I-Chen

    National Taiwan University
    • 4.5 Performance Improvement using Diluted KOH Passivation on Recessed-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors Grown on 8-inch Silicon(111) Substrates

      Yi-Hong Jiang, National Taiwan University
      Li-Cheng Chang, National Taiwan University
      Kai-Chieh Hsu, National Taiwan University
      I-Chen Tseng, National Taiwan University
      Chao-Hsin Wu, National Taiwan University
      Download Paper
  • Twitchen, Daniel

    Element Six Technologies
    • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

      Dong Liu, University of Oxford, University of Bristol
      Daniel Francis, Element Six Technologies
      Firooz Faili, Element Six Technologies
      James Pomeroy, University of Bristol
      Daniel Twitchen, Element Six Technologies
      Martin Kuball, University of Bristol
      Download Paper
    • 20.10 Overcoming High Power Limitation of Thin Film Resistors at GHz Frequencies Using CVD Diamond Substrates

      Julian Anaya, Anaya Scientific Consultancy
      Thomas Obeloer, Element Six
      Daniel Twitchen, Element Six Technologies
      Download Paper
  • Udwary, Kevin

    Kyma Technologies
    • 14.3 Development of Homoepitaxial Growth of Ga2O3 by Hydride Vapor Phase Epitaxy

      Jacob Leach, Kyma Technologies, Inc.
      Kevin Udwary, Kyma Technologies
      Tom Schneider, Kyma Technologies, Inc.
      John Blevins, Air Force Research Laboratory
      Keith Evans, Kyma Technologies, Inc.
      Greg Foundos, Northrop Grumman SYNOPTICS
      Kevin Stevens, Northrop Grumman SYNOPTICS
      Download Paper
  • Uematsu, K.

    Sumitomo Electric Industries, Ltd.
    • 16.4 Development of Non-Core 4-inch GaN Substrate

      Hideki Osada, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yoshizumi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      K. Uematsu, Sumitomo Electric Industries, Ltd.
      S. Minobe, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Sato, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      F. Nakanisihi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yamamoto, Sumitomo Electric Industries, Ltd.
      Y. Hagi, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Y. Yabuhara, Sumiden Semiconductor Materials Co Sumitomo Electric Industries
      Download Paper
  • Uren, Michael

    University of Bristol
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
      Download Paper
  • Valade, Tim

    Broadcom
    • 12.1 Reduction of Metal Defect Formation through Process Optimization

      Sarah Mason, Broadcom
      Tim Valade, Broadcom
      Joseph Chiavetta, Broadcom
      Dan Edwards, Broadcom
      Download Paper
  • Vardi, A

    Massachusetts Institute of Technology
    • 3.2 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs

      A Vardi, Massachusetts Institute of Technology
      J. Lin, Massachusetts Institute of Technology
      W. Lu, Massachusetts Institute of Technology
      X. Zhao, Massachusetts Institute of Technology
      J. del Alamo, Massachusetts Institute of Technology
      Download Paper
  • Via, Glen

    AFRL
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Vigo, Alex

    Global Communications Seminconductor, LLC
    • 12.3 NiCr Sheet Resistance Adjustment During Wafer Fabrication Process

      Lena Luu, Global Communications Semiconductor, LLC
      Minkar Chen, Global Communications Seminconductor, LLC
      Alex Vigo, Global Communications Seminconductor, LLC
      Download Paper
  • W. Palmour, John

    Wolfspeed, A Cree Company
    • 2.1 Current Progress in SiC Power MOSFETs and Materials

      John W. Palmour, Wolfspeed, A Cree Company
      Scott Allen, Wolfspeed, A Cree Company
      Brett Hull, Wolfspeed, A Cree Company
      Elif Balkas, Wolfspeed, A Cree Company
      Yuri Khlebnikov, Wolfspeed, A Cree Company
      Al Burk, Wolfspeed, A Cree Company
      Download Paper
  • Waco, Robert

    Qorvo Inc.
    • 17.1 RF DS Yield Improvement through ZONAL Technique for pHEMT Product

      Yiping Wang, Qorvo Inc.
      Pat Hamilton, Qorvo Inc.
      Robert Waco, Qorvo Inc.
      Jeremy Middleton*, TriQuint Semiconductor, Inc.
      Frank Barnes, Qorvo Inc.
      Andrew Choo, UP! Strategies Consulting
      Download Paper
    • 17.5 Chemical Attack of a pHEMT Channel Due to Poor Passivation Coverage

      Robert Waco, Qorvo Inc.
      Corey Nevers, Qorvo, Inc
      Val Besong, Qorvo, Inc.
      Download Paper
  • Wagner, Guenter

    Leibniz-Institut für Kristallzüchtung
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
      Download Paper
  • Wah Tang, Chak

    Hong Kong University of Science and Technology
    • 20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric

      Huaxing Jiang, Hong Kong University of Science and Technology
      Chao Liu, Hong Kong University of Science and Technology
      Yuying Chen, Hong Kong University of Science and Technology
      Chak Wah Tang, Hong Kong University of Science and Technology
      Kei May Lau, Hong Kong University of Science and Technology
      Download Paper
  • Walecki, Abigail

    SOLLC
    • 11.4 Metrology for In-situ Monitoring of Roughness for Diffusers for Light Emitting Devices Manufacturing

      Wojtek Walecki, Frontier Semiconductor
      Peter Walecki, SOLLC
      Eve Walecki, SOLLC
      Abigail Walecki, SOLLC
      Download Paper
  • Walecki, Eve

    SOLLC
    • 11.4 Metrology for In-situ Monitoring of Roughness for Diffusers for Light Emitting Devices Manufacturing

      Wojtek Walecki, Frontier Semiconductor
      Peter Walecki, SOLLC
      Eve Walecki, SOLLC
      Abigail Walecki, SOLLC
      Download Paper
  • Walecki, Peter

    SOLLC
    • 11.4 Metrology for In-situ Monitoring of Roughness for Diffusers for Light Emitting Devices Manufacturing

      Wojtek Walecki, Frontier Semiconductor
      Peter Walecki, SOLLC
      Eve Walecki, SOLLC
      Abigail Walecki, SOLLC
      Download Paper
  • Walecki, Wojtek

    Frontier Semiconductor
    • 11.4 Metrology for In-situ Monitoring of Roughness for Diffusers for Light Emitting Devices Manufacturing

      Wojtek Walecki, Frontier Semiconductor
      Peter Walecki, SOLLC
      Eve Walecki, SOLLC
      Abigail Walecki, SOLLC
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  • Walker, Dennis

    Air Force Research Laboratory
    • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

      Neil Moser, George Mason University
      Kelson Chabak, Air Force Research Laboratory
      Andrew Green, Air Force Research Laboratory
      Dennis Walker, Air Force Research Laboratory
      Stephen Tetlak, AFRL
      Eric Heller, AFRL
      Antonio Crespo, AFRL
      Robert Fitch, AFRL
      Jonathan McCandless, AFRL
      Kevin Leedy, AFRL
      Michele Baldini, Leibniz-Institut für Kristallzüchtung
      Guenter Wagner, Leibniz-Institut für Kristallzüchtung
      Glen Via, AFRL
      John Blevins, Air Force Research Laboratory
      Gregg Jessen, AFRL
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  • Waller, William

    University of Bristol
    • 18.1 Link Between Silicon Nitride Stoichiometry, Vertical Epitaxial Conductivity and Current Collapse in AlGaN/GaN Power Devices

      William Waller, University of Bristol
      Mark Gajda, NXP Semiconductors
      Saurabh Pandey, NXP Semiconductors
      Johan Donkers, NXP Semiconductors
      David Calton, NXP Semiconductors
      Jeroen Croon, NXP Semiconductors
      Serge karboyan, University of Bristol
      Michael Uren, University of Bristol
      Martin Kuball, University of Bristol
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  • Wan, Y.

    Hong Kong University of Science and Technology
    • 3.1 InAs/GaAs Quantum Dot Lasers on Exact GaP/Si (001) and Other Templates

      J. E. Bowers, University of California Santa Barbara
      A. Liu, University of California Santa Barbara
      D. Jung, University of California Santa Barbara
      J. Norman, University of California Santa Barbara
      A. Gossard, University of California Santa Barbara
      Y. Wan, Hong Kong University of Science and Technology
      Q. Li, Hong Kong University of Science and Technology
      K. Lau, Hong Kong University of Science and Technology
      M. Lee, University of Illinois Urbana-Champaign
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  • Wands, Raymond

    Qorvo
    • 17.4 Four Level Category Commonality and a Loophole in Is/Is Not Analysis

      Xiaokang Huang, Qorvo
      Joonbum Kwon, Qorvo
      Elda Clarke, Qorvo
      Gaurav Gupta, Qorvo
      Raymond Wands, Qorvo
      Francis Celii, Qorvo
      Van Tran, Qorvo
      Louis Breaux, Qorvo
      John Gibbon, Qorvo
      Jaime Trujillo, Qorvo
      Karsten Mausolf, Qorvo
      Michael Lube, Qorvo
      Craig Hall, Qorvo
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  • Wang, Curtis

    University of Illinois at Urbana-Champaign
    • 19.3 40 Gb/s VCSELs Test Data Collection, Analysis, and Process Problem Identification

      Junyi Qiu, University of Illinois at Urbana-Champaign
      Hsiao-Lun Wang, University of Illinois at Urbana-Champaign
      Curtis Wang, University of Illinois at Urbana-Champaign
      Xin Yu, University of Illinois at Urbana-Champaign
      Milton Feng, University of Illinois Urbana-Champaign
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  • Wang, Hsiang-Chun

    Chang Gung University
    • 6.2 High Performance Normally-Off Operation p-GaN Gate HEMT with Composited Barriers Structure Design

      Yi-Sheng Chang, Chang Gung University
      Bo-Hong Li, Chang Gung University
      Hsiang-Chun Wang, Chang Gung University
      Hsien-Chin Chiu, Chang Gung University
      Rong Xuan, Technology Development Division, Episil-Precision Inc, Taiwan
      Chih-Wei Hu, Technology Development Division, Episil-Precision Inc, Taiwan