9.2 Investigation of the Impacts of Interfacial Layers on the Degradation of GaN-on-Si HEMTs under Electrical Step Stress Testing

Luke Yates, Georgia Institute of Technology
Chien-Fong Lo, IQE
Tingyu Bai, University of California, Los Angeles
Mark Goorsky, University of California, Los Angeles
Wayne Johnson, IQE
Samuel Graham, Georgia Institute of Technology
Download Paper